AKM launches new series of power management ICs for energy harvesting

Asahi Kasei Microdevices (AKM) has developed the AP4413, a new series of ultra-low current power management ICs (PMICs) ideal for battery charging systems used in energy harvesting applications. The AP4413 series enables efficient battery charging while consuming an extremely low current of 52 nA and features four variants with voltage threshold characteristics matching several common rechargeable battery types. The AP4413 comes in a tiny 3.0 × 3.0 × 0.37 mm HXQFN package and has been in mass production since February of 2025.

Equipped with AKM’s proprietary ultra-low current voltage monitoring system, the AP4413 series enables autonomous charging of a small rechargeable battery via energy harvesting, which is becoming increasingly common across a wide range of applications such as remote controls, Bluetooth trackers, and IoT sensors, which have traditionally used disposable batteries. This is particularly relevant in Europe, where the transition to rechargeable batteries is being promoted by Regulation (EU) 2023/1542 to evaluate the feasibility of phasing out disposable batteries.

These devices allow system designers to utilise small amounts of ambient environmental energy, such as indoor light and body heat, to operate a variety of electronic devices, many of which are battery-operated. This is especially beneficial for IoT environmental sensors such as CO2 monitors that are installed in locations where line power is not easily accessible, and where battery replacement would be difficult.

Using energy harvesting to charge batteries is challenging, because the harvested voltage and current tend to be small and often unstable. It is therefore essential to minimise the PMIC’s power consumption and prevent excessive charging and discharging. The AP4413 series’ ultra-low 52 nA current consumption has minimal impact on a system’s power budget, and its voltage monitoring system prevents rechargeable batteries from becoming completely discharged, allowing for quick startup and/or recovery. Furthermore, the addition of an inline capacitor allows the AP4413 series PMICs to support system operation even when the battery is completely discharged, while recharging it at the same time.

https://www.akm.com

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Microchip introduces MCU family to simplify analog sensor design

Microchip has released the PIC16F17576 microcontroller (MCU) product family with integrated low-power peripherals and the ability to precisely measure volatile analog signals.

PIC16F17576 MCUs feature a new low-power comparator and voltage reference combination that can operate while the MCU core is in sleep mode, allowing for continuous analog measurement while consuming less than 3.0 µA of current. The Analog Peripheral Manager (APM) controls which peripherals are active to minimise total energy consumption and enable battery-operated applications to monitor signals effectively without excessive power drain.

Engineered for applications that measure volatile analog signals, PIC16F17576 MCUs include operational amplifiers (op amps) with software-controlled gain ladders. This feature enables a single op amp to switch between multiple gain options, helping mitigate noise while maintaining precision and power efficiency. Equipped with up to four op amps and a 12-bit differential ADC with automated averaging, the MCUs enable precise signal measurement over a wide range of inputs.

“Sensor systems can quickly become complex, often requiring multiple analog components that add board size, cost and power draw,” said Greg Robinson, corporate vice president of Microchip’s MCU business unit. “With the integrated analog features in our low-power PIC16F17576 MCUs, we’re cutting that complexity. You can eliminate parts and reduce power consumption, cutting costs and simplifying the overall design process.”

PIC16F17576 MCUs are well suited for measuring analog signals in a number of industries, including environmental and industrial monitoring, smart home and building automation. Key applications include vibration and strain measurement, flow metering, gas detection, cold asset tracking and motion sensing.

Development Tools
PIC16F17576 MCUs are supported by MPLAB X Integrated Development Environment (IDE) and MPLAB Code Configurator which allows designers to easily manage the functionality of the APM and analog peripherals. The devices are compatible with Microchip’s Curiosity Nano EV14L29A development board and MPLAB PICkit development tools.

https://www.microchip.com

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Renesas introduces new RA0 series based on the Arm Cortex-M23 processor

The new devices offer extremely low power consumption, extended temperature range, and a wide variety of peripheral functions and safety features.

RA0E2 MCUs are fully compatible with RA0E1 devices, offering pin-expansion while maintaining the same peripherals and ultra-low power. This compatibility lets customers re-use existing software assets. The new devices deliver industry-leading power consumption of only 2.8mA current in active mode, and 0.89 mA in sleep mode. In addition, an integrated High-speed On-Chip Oscillator (HOCO) enables the fastest wake-up time for this class of microcontroller. The fast wake-up enables the RA0 MCUs to stay in Software Standby mode more of the time, where power consumption drops to a minuscule 0.25 µA.

Renesas’ RA0E1 and RA0E2 ultra-low power MCUs deliver an ideal solution for battery-operated consumer electronics devices, small appliances, industrial system control and building automation application.

The RA0E2 devices have a feature set optimised for cost-sensitive applications. They offer a wide operating voltage range of 1.6V to 5.5V so customers don’t need a level shifter/regulator in 5V systems. The RA0 MCUs also integrate timers, serial communications, analog functions, safety functions and security functionality to reduce customer BOM cost. A wide range of packaging options is also available, including a tiny 5mm x 5mm 32-lead QFN.

In addition, the new MCU’s high-precision (±1.0%) HOCO improves baud rate accuracy and enables designers to forego a standalone oscillator. Unlike other HOCOs in the industry, it maintains this precision in environments from -40°C to 125°C. This wide temperature range enables customers to avoid costly and time-consuming “trimming,” even after the reflow process.

Key Features of the RA0E2 Group MCUs
Core: 32MHz Arm Cortex-M23
Memory: Up to 128KB integrated Code Flash memory and 16KB SRAM
Extended Temperature Range: Ta -40°C to 125°C
Timers: Timer array unit (16b x 8 channels), 32-bit interval timer (8b x 4 channels), RTC
Communications Peripherals: 3 UARTs, 2 Async UART, 6 Simplified SPIs, 2 I2C, 6 Simplified I2Cs
Analog Peripherals: 12-bit ADC, temperature sensor, internal reference voltage
Safety: SRAM parity check, invalid memory access detection, frequency detection, A/D test, output level detection, CRC calculator, register write protection
Security: Unique ID, TRNG, AES libraries, Flash read protection
Packages: 32- and 48-lead QFNs, 32-, 48-, and 64-pin LQFP

The new RA0E2 Group MCUs are supported by Renesas’ Flexible Software Package (FSP). The FSP enables faster application development by providing all the infrastructure software needed, including multiple RTOS, BSP, peripheral drivers, middleware, connectivity, networking, and security stacks as well as reference software to build complex AI, motor control and cloud solutions. It allows customers to integrate their own legacy code and choice of RTOS with FSP, thus providing full flexibility in application development. Using the FSP will ease migration of RA0E1 designs to larger RA0E2 devices if customers wish to do so.

https://www.renesas.com/RA0E2

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Infineon introduces new generation of IGBT and RC-IGBT devices

The market for electric vehicles continues to gather pace with a strong volume growth of both battery electric vehicles (BEVs) and plug-in hybrid electric vehicles (PHEVs). The share of electric vehicles produced is expected to see double-digit growth by 2030 with a share of around 45 percent compared to 20 percent in 2024. Infineon is responding to the growing demand for high-voltage automotive IGBT chips by launching a new generation of products. Among these offerings are the EDT3 (Electric Drive Train, 3 rd generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. These devices enhance the performance of electric drivetrain systems, making them particularly suitable for automotive applications.

The EDT3 and RC-IGBT bare dies have been engineered to deliver high-quality and reliable performance, empowering customers to create custom power modules. The new generation EDT3 represents a significant advancement over the EDT2, achieving up to 20 percent lower total losses at high loads while maintaining efficiency at low loads. This achievement is due to optimisations that minimise chip losses and increase the maximum junction temperature, balancing high-load performance and low-load efficiency. As a result, electric vehicles using EDT3 chips achieve an extended range and reduce energy consumption, providing a more sustainable and cost-effective driving experience.

The EDT3 chipsets, which are available in 750 V and 1200 V classes, deliver high output current, making them well-suited for main inverter applications in a diverse range of electric vehicles, including battery electric vehicles, plug-in hybrid electric vehicles, and range-extended electric vehicles (REEVs). There reduced chip size and optimised design facilitate the creation of smaller modules, consequently leading to lower overall system costs. Moreover, with a maximum virtual junction temperature of 185°C and a maximum collector-emitter voltage rating of up to 750 V and 1200 V, these devices are well-suited for high-performance applications, enabling automakers to design more efficient and reliable powertrains that can help extend driving range and reduce emissions.

The 1200 V RC-IGBT elevates performance by integrating IGBT and diode functions on a single die, delivering an even higher current density compared to separate IGBT and diode chipset solutions. This advancement translates into a system cost benefit, attributed to the increased current density, scalable chip size, and reduced assembly effort.

Infineon’s latest EDT3 IGBT chip technology is now integrated into the HybridPACK Drive G2 automotive power module, delivering enhanced performance and capabilities across the module portfolio. This module offers a power range of up to 250 kW within the 750 V and 1200 V classes, enhanced ease of use, and new features such as an integration option for next-generation phase current sensors and on-chip temperature sensing, contributing to system cost improvements.

All chip devices are offered with customised chip layouts, including on-chip temperature and current sensors. Additionally, metallisation options for sintering, soldering and bonding are available on request.

https://www.infineon.com

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