Latest Bluetooth module from Panasonic now in mass production and supporting Bluetooth 6.0

Now in mass production, the PAN B611-1 Bluetooth module from Panasonic Industry is based on the powerful Nordic nRF54L15 single chip controller. The product now also supports Bluetooth 6.0 and the cutting-edge Bluetooth Channel Sounding feature, enabling precise distance measurement and improved wireless communication.

All 32 pins available on nRF54L15 are routed out on to a hybrid packaging consisting of castellated edges and LGA in a hybrid layout such that a dedicated number of pins positioned at the edge lending for easy prototyping, with the rest of the GPIOs located at the bottom that allows leveraging the full potential of the wireless SoC platform.

The module benefits from very small dimensions of only 10.35 mm × 9.8 mm × 1.9 mm. This way, it combines the advantages of both worlds without compromising on size and enables one of the best pin-to-size ratios for Bluetooth modules currently on the market. Its edge pins facilitate easier hand-soldering and support the use of inexpensive 2-layer PCB designs and optical inspection methods, eliminating the need for costly X-ray machines.

Based on nRF54L15, the module is shipped with an open embedded application processor based on ARM Cortex-M33 processor clocking up to 128 MHz for high performance embedded applications with a 256 kB RAM. Furthermore, the module has a non-volatile memory of 1.5 MB as available on the SoC.

However, Panasonic adds further features above and beyond those available on the SoC. Pascal Maier, Head of IOT Devices at Panasonic Industry comments: “Our latest PAN B611-1 Bluetooth module is a versatile device that can support a variety of applications – from ultra-low power battery driven solution to very complex applications like Matter, as well as sophisticated algorithm-heavy features like Channel Sounding. This is why we offer different spec variants to enable a variety of applications. The modules are for example available with additional integrated slow clock crystal for energy efficient battery powered operation and additional 4 MB Flash Memory for more complex applications. We think our clients will love this module for its versatility and power at a competitive price point.”

An output power of 8dbm makes the module ideally suited for the European market. The main target applications are lighting, home appliances, industrial sensors, medical devices, healthcare wearables and energy management devices and solar farms.

Furthermore, the PAN B611-1 is ideally suited for Matter applications, as dedicated variants exist with additional flash memory, and is fully compatible with the PAN MAX Service that facilitates the production and launch of Matter production. Apart from Matter, the highly versatile module also supports a variety of wireless protocols in the 2.4 GHz spectrum including Bluetooth LE, Bluetooth Mesh and IEEE 802.15.4 – enabling Zigbee and Thread as well as other third-party proprietary technologies, which make it effortless to develop products for smart home standards like Matter and Zigbee and even allow running multiple wireless protocols concurrently.

The PAN B611-1 Bluetooth module is available with an integrated chip antenna (-1C) or as bottom pad version (-1B) to cater to diverse project needs. It is certified for Europe (CE RED), UK (UKCA), USA (FCC), Canada (ISED), Japan (MIC).

https://industry.panasonic.eu

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Alif Semi release benchmark results from its latest GenAI enabled MCUs

Alif Semiconductor has released benchmarks on its latest E4, E6 and E8 microcontrollers and fusion processors.

The new Ensemble devices contain support for up to two MIPI-CSI image sensors. They also include a fully hardware-accelerated image signal processor (ISP) pipeline that operates at up to 60fps at 2MP resolution. This image throughput is enabled with a new wide memory subsystem for extremely fast on-chip as well as off-chip transactions, pushing inferencing speed well below a millisecond when running AI models from internal, highly power efficient MRAM.

The generative AI capability in the Ensemble E4, E6, and E8 devices is made possible by Alif’s future-proof system architecture. Alif is the first silicon provider to offer the Arm Ethos-U85 NPU which supports transformer-based ML networks. As an example of power efficiency, an SLM executed on an E4 device draws only 36mW of power when generating text to construct a story based on a user-provided prompt.

These levels of performance and efficiency enable developers to innovate next-generation products in human-to-computer interfacing, healthcare and diagnostics, robotics, transportation, toys and education, smart homes, and smart city equipment.

Paul Williamson, Senior Vice President and General Manager, IoT Line of Business at Arm, said: “Generative AI is raising the bar for intelligence beyond the cloud, demanding greater performance, privacy, responsiveness, and efficiency. Powered by Arm Ethos technology and supported by our robust software ecosystem, Alif’s latest Ensemble MCUs bring advanced on-device AI capabilities to even the most constrained devices, unlocking real-time insights in applications like health monitoring and wearables. This enables developers to deliver the next generation of intelligent, on-device experiences.”

https://alifsemi.com

 

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ROHM develops an ultra-compact MOSFET ideal for fast charging

ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.

With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less.

In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimised for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimising the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).

The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimises power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.

For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.

The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturisation with the development of an even smaller 1.2mm × 1.2mm model.

https://www.rohm.com

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New eBook from Mouser and TDK explores challenges in industrial automation

Mouser has announced a new interactive eBook in collaboration with TDK exploring the challenges of efficiency, safety, and sustainability in advanced automation applications.

Modern Industrial Technologies: Driving Efficiency and Innovation gives a deep dive into the ever-increasing demands for precision, speed, and efficiency in modern industrial automation, robotics, energy and sensor technology and how TDK’s technology portfolio empowers engineers to overcome these challenges. This eBook gives insights into various considerations vital to a whole range of automation activities, from simple voltage and current measurements to complex navigational signal analysis and system diagnostics.

The ERUC23 SMT flat wire coupled inductors feature low-loss ferrite, high-saturation currents, and low DC resistance, offering self-leaded construction with flat wire winding and lead-free tinned terminals for 48Vinto 12Vout hybrid converters and dual-phase buck, boost, and buck-boost converters. The ERUC23 inductors also provide reduced ripple with improved efficiency in a compact package. The ERUC23 series is RoHS compatible and AEC-Q200 qualified.

The B43659 ultra-compact snap-in capacitors provide high reliability and high ripple current capability for power supplies, frequency converters, uninterruptible power supplies (UPS), medical appliances, and solar inverters. These extremely high CV products feature snap-in solder pins, an aluminium case, and both two-terminal and three-terminal versions to ensure correct installation. The B43659 series is RoHS compliant and offers a rated voltage of 450VDC and a capacitance range of 140µF to 1030µF with ±20% tolerance and operating in a -40°C to +105°C temperature range.

EPCOS/TDK’s PiezoHapt and PowerHap actuators are ideal for providing haptic feedback to user actions in smartphones and touchpad displays, car navigation systems, controllers, household appliances, industrial equipment, and medical devices. The PiezoHapt actuators consist of a vibration unit with a multilayer piezoelectric element and vibration plate, while the PowerHap version has multilayer piezo plates with copper inner electrodes. These devices are RoHS compatible and have an operating temperature range of -10°C to +60°C or -40°C to +85°C.

The FLECLEAR Ag-Stacked Film Sheets feature a thin, transparent, conductive Ag alloy layer that is deposited on a film substrate, ideal for light control windows (smart windows) and organic photovoltaics (OPVs), flexible displays and lighting, or transparent electrodes of wearable devices.

https://www.mouser.com

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