Super-junction MOSFETs minimise power dissipation
Leveraging ST Microelectronics’ carrier-lifetime control technology, the MDmesh DM6 MOSFETs are 600V devices that contain a fast recovery body diode to bring the performance advantages of ST’s super-junction technology to full and half-bridge topologies, zero voltage switching (ZVS) phase shift converters and any topologies that require a diode able to handle dynamic dV/dt.
The MDmesh DM6 MOSFETs have reduced reverse-recovery time (trr) to minimise power dissipation in the diode when turning off after freewheeling. Recovery softness is optimised to enhance reliability, adds ST. In addition, very low gate charge (Qg) and on-resistance (RDSON), and a capacitance profile tailored for light loads, allow higher operating frequencies and greater efficiency, with simplified thermal management and reduced EMI. These characteristics make the MDmesh DM6 devices suitable for equipment such as charging stations for electric vehicles, telecom or data centre power converters, and solar inverters, where they are claimed to enable superior energy ratings with more robust performance and increased power density.
The MOSFETs are part of the STPower portfolio. There are 23 part numbers covering current ratings from 15 to 72A, with gate charge (Qg) ranging from 20nC to 117nC and RDSON from 0.240 down to 0.036 Ohm respectively.
Package options include the new low-inductance leadless TO-LL, PowerFLAT 8×8 HV, D2PAK, TO-220, and TO-247 with short leads, long leads, or Kelvin pin for applications requiring precision current sensing.
The MDmesh DM6 family is in production now. Please contact your local ST office for pricing and sample requests.