Infineon CoolGaN technology selected for BRC Solar’s Power Optimiser
BRC Solar has selected Infineon’s CoolGaN Transistor 100 V devices for use in its latest Power Optimiser, highlighting the growing role of gallium nitride (GaN) technology in improving the efficiency of rooftop solar installations.
Designed in a compact 3 mm x 5 mm package, the CoolGaN 100 V family offers high switching speeds, low switching losses and reduced EMI compared with conventional silicon-based devices. These characteristics enable higher power density and improved overall system efficiency in space-constrained solar applications.
The transistors are being used to implement panel-level maximum power point tracking (MPPT), a technique that addresses one of the major challenges in rooftop solar systems. In conventional string-based installations, shading or reduced performance from a single panel can significantly lower the output of the entire string. By enabling MPPT at the individual panel level, power optimisers can maximise energy harvesting across the complete installation, even when some panels are partially shaded.
GaN technology is particularly well suited to this application because it supports higher switching frequencies, allowing designers to reduce the size of passive components while maintaining high conversion efficiency. The result is smaller, more compact power optimiser designs capable of delivering greater energy yield.
The CoolGaN portfolio spans a range of voltage and power ratings and includes both discrete and integrated devices, giving designers flexibility when developing high-efficiency power conversion systems for renewable energy applications.
As residential and commercial solar installations continue to grow, the use of GaN devices in power conversion stages is expected to play an increasingly important role in improving system efficiency, reducing losses and increasing energy production.
