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Three RF power transistors series target ISM satellite, avionics and radar

Tue, Jul 20, 2021

Three series expand STMicroelectronics’ STPower family of LDMOS transistors, addressing RF power amplifier applications in commercial and industrial projects.

The high efficiency, low thermal resistance devices combine a short conduction-channel length with a high breakdown voltage for cost-effective, low power consumption but high reliability operation, says ST.

The IDCH and IDDE series are 28V / 32V common-source N-channel enhancement-mode, lateral, field-effect RF power transistors.

The IDCH devices provide output power from 8.0 to 300W and are specifically designed for applications up to 4GHz, including 2.45GHz industrial, scientific, and medical (ISM), wireless infrastructure, satellite communications, and avionics and radar equipment. The LDMOS devices are suitable for all types of modulation formats.

The IDDE series consists of 10 to 700W devices for broadband commercial, industrial, and scientific applications at frequencies up to 1.5GHz. The devices can withstand a load voltage standing wave ratio (VSWR) of 10:1, through all phases. The IDDE LDMOS transistors are suitable for all typical modulation formats, and for most classes of RF power amplifier operation including Class A, Class AB, and Class C. The high efficiency minimises the energy needed to deliver the required output power, resulting in lower operating costs and reduced heat dissipation to simplify thermal management and to enable more compact systems.

In the IDEV series, devices are based on a 50V common-source, N-channel-enhancement-mode, lateral field-effect, RF power transistor technology. The transistors have output power from 15 up to 2.2kW and are designed for ISM applications at frequencies up to 250MHz, including driving high power CO2 lasers, plasma generators, MRI systems, broadcast FM radio transmitters in the 88 to 108MHz range, and avionics and radar applications up to 1.5GHz. They are suitable for all typical modulation formats and for power amplifier operation in Class A, Class AB, and Class C.

The rugged IDEV series is capable of up to 2.2kW continuous wave (CW) output power, from HF (3.0 to 30MHz) frequencies up to 250MHz. The single ceramic package reduces the number of RF power transistors needed in high power applications, such as broadcast transmitters, says ST. Power efficiency greater than 82 per cent minimises system power demand and ensures high reliability with simple thermal management.

There STPower RF LDMOS devices are available in industry standard packages.

http://www.st.com

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Hi-rel, rad-hard regulator, isolators and FET are for satellite power management

Mon, Jul 19, 2021

Renesas is targeting satellite power management with the ISL71001SLHM/SEHM point of load (PoL) buck regulator, ISL71610SLHM and ISL71710SLHM digital isolators, and the ISL73033SLHM 100V GaN FET and integrated low-side driver.

The ICs combine the board area savings and cost advantages of plastic packaging for space-grade projects missions in medium/geosynchronous Earth orbit (MEO/GEO) with longer lifetime requirements. They can also be specified for small satellites and higher density electronics where they reduce size, weight, and power (SWaP) costs, says Renesas.

The ICs also complement the radiation-tolerant plastic-package ICs Renesas introduced in 2017 for small satellites in low Earth orbit (LEO). Renesas says that its plastic IC offering supports multiple orbit ranges, balancing radiation performance and optimal cost for a variety of satellite subsystems and payloads.

“With every new mission, customers want more functionality, which requires larger satellite payloads and has traditionally translated into increased SWaP for the satellite systems,” said Philip Chesley, vice president, Industrial and Communications Business division at Renesas. He continued that the new ICs offer customers the “SWaP advantages of plastic packaging to save up to 50 per cent of the board area compared to ceramic-packaged devices, while maintaining the reliability and radiation assurance required for higher orbit missions with lifespans ranging up to and beyond 15 years.”

Traditionally, radiation-hardened (rad-hard) ICs were almost exclusively produced using hermetically sealed ceramic packages, which achieved the required reliability but had significant trade offs in terms of size and weight. The Renesas rad-hard plastic ICs help customers reduce their electronics footprint and cost without compromising performance, assured Renesas.

To ensure the plastic ICs adhere to the highest quality for operation in harsh space environments, the ICs have QMLV-like production level testing, and all devices will undergo radiation lot acceptance testing (RLAT).

The production test flow includes 100 per cent CSAM, x-ray, temperature cycling, static and dynamic burn-in, and visual inspection. It also aligns with the SAE AS6294/1 standard for plastic encapsulated microelectronics in space. Additional screening includes lot assurance testing per assembly and wafer lot product for HAST (highly accelerated stress test), life testing, and moisture sensitivity.

The rad-hard ICs are characterisation tested at a total ionising dose (TID) of up to 75krad(Si) for low dose rate (LDR) and at a linear energy transfer (LET) of 60MeV•cm2/mg or LET 86MeV•cm2/mg for single event effects (SEE). The ISL71001SEHM is rated at TID up to 100krad(Si) for high dose rate (HDR).

The ISL73033SLHM low-side driver and 100V GaN FET combines the GaN FET driver and GaN FET in a single package to simply gate design and improve efficiency. It is claimed to reduce area size by 20 per cent compared with an SMD 0.5 rad-hard MOSFET. Tolerance is 30A with 7.5mOhm (typical) RDS on with 100V VDS. The total gate charge is just 14nC (typical). The integrated driver features 4.5V regulated gate drive voltage and 3A/2.8A sink/source capability.

The ISL71610SLHM and ISL71710SLHM digital isolators are based on giant magneto-resistive (GMR) isolation technology, claimed to deliver better radiation tolerance compared with existing space grade optocouplers on the market. Other features are 2.5kV RMS isolation, 1.3A quiescent current, low EMI with no carrier or clock noise and up to 100Mbits per second data rates (ISL71610SLHM) or 150Mbits per second for the ISL71710SLHM.

The 6A ISL71001SLHM/SEHM buck regulator has 95 per cent peak efficiency, fixed 1MHz switching frequency and adjustable output voltage.

Customers can add the new rad-hard plastic ICs to their existing architecture with a new package type and production flow. The ISL71610SLHM and ISL71710SLHM ICs can also be combined with Renesas’ rad-hard and rad-tolerant CAN bus transceiver and RS-422 transceiver product families for use in serial communications systems.

The ISL71610SLHM, ISL73033SLHM and ISL71001SLHM are available now. The ISL71710SLHM will be available in September 2021 and the ISL71001SEHM will be available in Q4 2021.

https://www.renesas.com

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AcceleRate arrays support PICMG COM-HPC interconnect data rates

Mon, Jul 19, 2021

Artificial intelligence (AI) accelerators, ASIC emulators and next-gen edge computing benefit from the PICMG COM-HPC Interconnect, says Samtec, at the release of its AcceleRate HP high performance arrays. AcceleRate HP supports 112Gbits per second PAM4 extreme performance in a micro footprint.

Samtec’s AcceleRate HP high performance arrays feature an open pin field array which maximises grounding and routing flexibility. System architects can route high performance differential pairs, single ended signals and high current voltage rails via the same interconnect.

The 2.2, 2.4 and 2.2mm row pitch eases routing of differential signals. Crosstalk is improved with the increased space and with more ground vias around the differential signals.

The arrays include dense 0.635mm pitch, a low profile 5.0 and up to 10mm stack heights. Up to 400 pins are available. Samtec has also published a roadmap to develop arrays with 1,000 or more pins.

The AcceleRate HP high performance arrays are data rate compatible with PCIe 5.0 and 100 GbE. The array has a BGA termination for easy assembly and self-alignment.

Founded in 1976, Samtec is a privately held manufacturer of a broad line of electronic interconnect solutions, including high speed board-to-board, high speed cables, mid-board and panel optics, precision RF, flexible stacking and micro / rugged components and cables.

http://www.samtec.com

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Qi1.3 wireless charging reference design accelerates transmitter development

Thu, Jul 15, 2021

Following swiftly on the heels of the Wireless Power Consortium (WPC)’s Qi 1.3 specification, Microchip has released a compliant reference design. It includes everything needed to quickly develop a Qi 1.3-certified transmitter, says the company.

The Qi 1.3 specification requires authentication for improved safety when transmitting up to 15W of power between a transmitter and a receiver. To meet these requirements, Microchip’s wireless charging reference design includes the necessary tools and support for the seamless integration and certification of wireless charging systems in automotive and consumer applications.

The three-coil Qi 1.3 reference design integrates secure storage subsystem software with the wireless power microcontroller and enables custom topologies and foreign object detection (FOD) implementation.

Microchip is a regular member in the Wireless Power Consortium (WPC) and provided expertise during development of the recently released Qi 1.3 specification. Qi 1.3 mandates hardware-based authentication between transmitter and receiving devices for power transfer above 5.0W. By adhering to the new authentication standard, designers can ensure phones receiving 15W are receiving it from a Qi-certified authenticated transmitter to ensure safety.

The reference design includes a Qi controller, Qi application software, provisioned authentication controller that is a WPC-approved secure storage subsystem and crypto software libraries that execute on the Qi controller. It also includes complete schematics, bill of materials, software and design guidelines. Microchip is partnering with Avnet to make evaluation boards for the Qi reference design available to qualified customers around the world.

The reference design also incorporates MIC4605 and MCP14700 gate drivers, MCP16331 and MCP1725 regulators, an MCP6C02 current sense device, an ATA6563 CAN transceiver and an MCP9700 temperature sensor.

Microchip’s dsPIC33C family of devices run the Qi application software and the company also offers the ECC608/TA100 secure storage subsystem provisioned by Microchip as a licensed WPC Manufacturing Certificate Authority.

The Qi 1.3 wireless charging transmitter reference design is available for demonstrations and evaluations for qualified customers. The company will provide a license agreement to access the reference design software. Evaluation boards for these reference design will be available for purchase for qualified customers through Avnet in August 2021.

https://www.microchip.com

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Three RF power transistors series target ISM satellite, avionics and radar

Hi-rel, rad-hard regulator, isolators and FET are for satellite power management

AcceleRate arrays support PICMG COM-HPC interconnect data rates

Qi1.3 wireless charging reference design accelerates transmitter development

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