ICs & Semiconductors Archives - Page 54 of 230

COM Express Type 6 module is certified for railway applications

Mon, Sep 11, 2023

Proven shock and vibration resistant for harsh environments, congatec’s conga-TC570r COM Express Type 6 Compact modules has been IEC-60068 certified for operation in railway applications and extreme conditions, such as extended temperatures, rapid temperature changes, shocks and vibrations.

The COM Express Type 6 Compact modules are based on the 11th Generation Intel Core processor family (code named Tiger Lake) and are suitable for operation in railway applications. Customers benefit from an application-ready building block with proven ruggedness for various mission critical applications, said congatec.

The IEC-60068 certified conga-TC570r module suits various new railway applications, including train control and management systems (TCMS), predictive maintenance, passenger information systems, video surveillance and analytics, ticketing and fare collection, and fleet management and optimisation. They are also suitable for applications beyond transportation exposed to extreme conditions including automation, autonomous guided vehicles (AGV), autonomous mobile robots (AMR). These applications require advanced embedded computing capabilities provided by Intel’s 11th Gen Core processor technology, noted congatec, in an industry-compliant design certified to meet all required IEC-60068 specifications.

The conga-TC570r module has undergone rigorous testing and certification against various IEC-60068 standards. It is certified for reliable operation under extended temperatures ranging from -40 to +85 degrees C, including change of temperature (IEC-60068-2-14 Nb) and rapid change of temperature (IEC-60068-2-14 Na). It also provides shock and vibration resistance on the basis of DIN EN 61373 April 2011 category 2 (railway applications). The module is also protected against severe environmental conditions, such as high humidity, in accordance with IEC-60721-3-7 class 7K3, 7M2. Optional features include conformal coatings to enhance resistance to liquids and moisture further.

The rugged COM Express Compact Type 6 11th Gen Intel Core modules with soldered RAM and In-Band ECC (IBECC) are available in standard configurations, 8from two cores and two threads to four cores and eight threads, up to 12Mbyte cache and 48 to 96 graphics execution units. Customisation options are available upon request.

congatec offers also corresponding carrier boards and comprehensive cooling solutions for its IEC-60068 certified COM Express module, allowing for fast application design. The heat pipe -based passive cooling ensured optimided heat dissipation and ruggedness, said congatec, thanks to the fanless design, which extends the module’s lifetime and reliability.

Additionally, congatec’s design-in and compliance measurement services for PCIe Gen4/5 and USB4 simplifies and accelerates application design, improving design security and reducing time-to-market.

http://www.congatec.com

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Navitas unveils GaNSafe, a protected GaN power semiconductor

Thu, Sep 07, 2023

Rugged and protected, the fourth generation GaN technology from Navitas Semiconductor offers efficiency, power density and reliability, opening up GaN to applications such as data centre, solar and electric vehicle use.

GaNSafe is a wide bandgap power platform for demanding, high power applications. The power ICs integrate GaN power and drive, with control, sensing and protection to enable faster charging, higher power density, and greater energy savings. It is covered by a 20 year warranty – an industry first, said Navitas.

The initial, high power 650/800V GaNSafe portfolio covers a range of RDS(on) from 35 to 98 mOhm in a robust, and cool-running surface mount TOLL package, to address applications from 1,000 to 22,000W.

Additional application-specific protection features have been introduced for the power ICs to perform under grueling high-temperature, long-duration conditions. Safety features include protected, regulated, integrated gate drive control, with zero gate source loop inductance for reliable high speed 2MHz switching capability to maximise application power density.

There is also high speed short circuit protection, with autonomous ‘detect and protect’ within 50 nanoseconds which is four times faster than competing discrete solutions.

There is also electrostatic discharge (ESD) protection of 2kV, compared to zero for discrete GaN transistors and an increased voltage capability of 650V continuous, and 800V transient to protect during extraordinary application conditions.

The TOLL package has just four pins and programmable turn-on and turn-off speeds (dV/dt) to simplify EMI regulatory requirements.

Unlike discrete GaN transistor designs, with voltage spikes, undershoot and specification breaches, GaNSafe delivers an efficient, predictable, reliable system, said the company. The TOLL package has achieved IPC-9701 mechanical reliability standard as well as reducing connections, compared to multi-chip modules and with improved cooling capability, said Navitas.

Navitas’ market-specific system design centers offer complete platform designs with benchmark efficiency, density and system cost using GaNSafe products to accelerate customer time-to-revenue and maximise chance of first-time-right designs. These system platforms include complete design collateral with fully-tested hardware, embedded software, schematics, bill-of-materials, layout, simulation and hardware test results.

“Our original GaNFast and GaNSense technologies have set the industry standard for mobile charging, establishing the first market with high-volume, mainstream GaN adoption to displace silicon,” said Gene Sheridan, Navitas Semiconductor’s CEO and co-founder. “GaNSafe takes our technology to the next level, as the most protected, reliable and safe GaN devices in the industry, and now also targeting 1.0 to 22 kW power systems in AI-based data centres, EV, solar and energy storage systems. Customers can now achieve the full potential of GaN in these multi-billion dollar markets demanding the highest efficiency, density and reliability.”

The GaNSafe portfolio is available immediately to qualified customers with mass production expected to begin in Q4 2023.

http://www.navitassemi.com

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MRigidCSP package is claimed to increase MOSFET’s mechanical strength

Mon, Sep 04, 2023

Robust package technology, MRigidCSP, by Alpha and Omega Semiconductor (AOS), is initially offered on its AOCR33105E, 12V, common drain, dual N-channel MOSFET. The packaging technology is designed to decrease on resistance while increasing mechanical strength, and is particularly suited to battery applications in smartphones, tablets and ultra-thin notebooks.
AOS explained that fast charging, which requires lower power loss in the battery management circuit, is now widely adopted for portable devices. As the charging currents increase, ultra-low electrical resistance is needed for improved performance. In standard wafer-level chip scale packages (WL-CSPs), the substrate can be a significant portion of the total resistance when back-to-back MOSFETs are employed in battery management applications. A thinner substrate reduces the overall resistance but drastically reduces the package’s mechanical strength. This reduction of mechanical strength can lead to more stress during the PCB assembly reflow process, potentially causing warping or cracking in the die and, ultimately, failure in the application. The AOCR33105E is designed with trench-power MOSFET technology in a common drain configuration for design simplicity. It features low on resistance with ESD protection to improve performance and safety in battery management, such as protection switches and mobile battery charging and discharging circuits.
“Incorporating the AOS MRigidCSP packaging technology with our new dual N-channel MOSFET combines electrical performance improvements with the benefit of high robustness,” said Peter H. Wilson, senior MOSFET product line marketing director at AOS.
AOS designed the MRigidCSP package technology to be used with high aspect ratio CSP die sizes. The CSP construction delivers “a significantly strengthened battery MOSFET that won’t warp or break during the board manufacturing process,” added Wilson.
The AOCR33105E is available in a 2.08 x 1.45mm package, with RDS(on) of 3mOhm at 4.5V / 4.2mOhm at 3.1V.
The AOCR33105E in the MRigidCSP package is immediately available in production quantities with a lead time of 14 to 16 weeks. It is RoHS 2.0 compliant and is halogen-free.

http://www.aosmd.com

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TMCS1123 extends EZShunt portfolio to simplify current sensing

Wed, Aug 23, 2023

The latest addition to Texas Instruments’ current sensors portfolio is the TMCS1123 Hall-effect current sensor. It helps engineers simplify designs while improving accuracy, said the company.

Designed for a broad range of common-mode voltages and temperatures, the TMCS1123 series includes what is claimed to be a lowest-drift isolated Hall-effect current sensor for high voltage systems. There is also a portfolio of current shunt monitors that eliminate the need for an external shunt resistor for non-isolated voltage rails.

The TMCS1123 is also claimed to have the industry’s highest reinforced isolation and highest accuracy over lifetime and temperature. Its high accuracy and low propagation delay enables designers to use Hall-effect sensors in previously unrealisable high voltage systems, said the company, to reduce system cost and size.

The need for highly accurate current measurements in high-voltage systems such as electric vehicle chargers and solar inverters is growing, but Hall-effect current sensors have typically been overlooked given their high drift over lifetime. The TMCS1123 Hall-effect current sensor features the highest reinforced isolation working voltage of 1,100V DC. It also features a maximum sensitivity error of ±0.75 per cent with 50 ppm per degree C drift over temperature and ±0.5 per cent drift over lifetime. The TMCS1123 features low propagation delay of 600 nanoseconds and bandwidth of 250kHz, which enable faster control loops while keeping noise low to help increase system efficiency. The high precision and stability over lifetime remove the need to recalibrate equipment, reducing costly and time-consuming maintenance, added TI.

For non-isolated systems up to 85V and 75A RMS, TI also offers what is believed to be the industry’s smallest fully integrated current shunt monitor and the industry’s highest accuracy 75A integrated shunt solution.

TI’s EZShunt portfolio of current-sensing solutions simplifies designs by removing the need for an external shunt resistor. It provides a fully integrated current-sensing solution that fits within the footprint of a 1206 shunt resistor.

Pre-production quantities of the TMCS1123 Hall-effect current sensor are available now, in a 10.3 x 10.3mm, 10-pin small outline integrated circuit (SOIC) package. Designers can purchase the TMCS1123EVM evaluation module.

Higher bandwidth and automotive-qualified versions of the TMCS1123 are expected to be available in fourth quarter of 2023 and second quarter of 2024, respectively.

http://www.ti.com

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COM Express Type 6 module is certified for railway applications

Navitas unveils GaNSafe, a protected GaN power semiconductor

MRigidCSP package is claimed to increase MOSFET’s mechanical strength

TMCS1123 extends EZShunt portfolio to simplify current sensing

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