Automotive-grade MOSFETs lead way for small ADAS cameras

The new RV4xxx series enables greater miniaturisation in automotive devices such as ADAS camera modules, says Rohm Semiconductor.

The compact 1.6 x 1.6mm MOSFETs are AEC-Q101-qualified. The MOSFETs are claimed to be the first in the industry to ensure the electrode height on the side of the package (130 micron) required for vehicle applications by using original wettable flank formation technology. The result is a consistent solder quality, says Rohm – even for bottom electrode type products – enabling automatic inspection machines to easily verify solder conditions after mounting. Automotive optical inspection is performed during the assembly process, but the height of bottom electrode components solder cannot be verified after mounting. The RV4xxx series uses a proprietary wettable flank technology that guarantees an electrode height on the side of the package of 130 micron. This is achieved by making a cut into the lead frame on the side of the package before plating. However, burrs resulting from cutting into the lead frame can occur more frequently as the height of the cut increases. Rohm’s method introduces a barrier layer on the entire surface of the lead frame to minimise the occurrence of burrs. This not only prevents component rise and solder defects during mounting, but is the first on the market to ensure a 130 micron electrode height on the side of DFN1616 (1.6 x 1.6mm) packages.

Schottky barrier diodes (SBDs) are commonly used in the reverse connection protection circuits of ADAS camera modules, but the larger currents required by high resolution cameras in advanced vehicle systems, call for the use of compact MOSFETs instead that provide low on resistance and less heat generation.

For example, at a current and power consumption of 2.0A and 0.6W, respectively, conventional automotive MOSFETs can reduce mounting area by 30 per cent compared with SBDs, says Rohm. In addition, adopting bottom electrode MOSFETs for their heat dissipation characteristics, while still supporting large currents in an even smaller form factor makes it possible to decrease mounting area by as much as 78 per cent compared with conventional SBDs and by as much as 68 per cent compared with conventional MOSFETs.

Samples are available now, with OEM qualities expected in September 2019.

http://www.rohm.com/eu

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Trio of photocouplers drive industrial applications with lower power budgets

Three 15Mbits per second photocouplers from Renesas Electronics are designed to withstand the harsh operating environments of industrial and factory automation equipment. They have been developed in response to the trend for higher voltage, compact systems for safety standards and eco-friendly designs that require smaller ICs with lower power consumption. The RV1S9x60A family is claimed to have best-in-class low threshold input current (IFHL) ratings. The RV1S9160A (SO5) operates at 2.0mA, the RV1S9060A (LSO5) operates at 2.2mA and the RV1S9960A (LSDIP8) operates at 3.8mA.

Lower power consumption allows the RV1S9x60A photocouplers to suppress power supply heat generation. Operation at high temperatures, up to 125 degrees C (+110 degrees C for RV1S9960A) saves board space by allowing the photocoupler to be mounted near an IGBT or MOSFET power device. The devices are targeted at DC to AC power inverters, AC servo motors, programmable logic controllers (PLCs), robotic arms, solar and wind input power conditioners, and battery management systems for energy storage and charging.

The RV1S9x60A photocouplers feature high common mode rejection (noise tolerance) up to 50 kV/ micro seconds (minimum) to protect microcontrollers and other I/O logic circuits from high voltage spikes while transferring high-speed signals. The RV1S9x60A family also offers a variety of packages with the smallest footprint for each reinforced isolation (up to 690Vrms), and minimum creepage distances of 4.2 to 14.5mm to ensure safe operation.

The RV1S9160A, RV1S9060A and RV1S9960A photocouplers operate at low voltages, from 2.7 to 5.5V. Isolation voltages are 3,750Vrms (RV1S9160A), 5,000Vrms (RV1S9060A), and 7,500Vrms (RV1S9960A).

High temperature operation from -40°C to +125°C (RV1S9160A and RV1S9060A), and from -40°C to +110°C (RV1S9960A)

The supply current is 2.0mA (max), with a low pulse width distortion at 20 nanoseconds (max). Propagation delay is 60 nanoseconds max and propagation delay skew is 25 nanoseconds max.

The RV1S9x60A 15Mbits per second photocouplers are available now from Renesas Electronics’ worldwide distributors.

Renesas Electronics specialises in microcontrollers, analogue, power and SoC products for a range of automotive, industrial, home electronics, office automation, and information communication technology applications.

http://www.renesas.com

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ANPC inverter design secures ‘sweet spot’ for PV

According to Infineon Technologies, the use of an advanced neutral-point-clamped (ANPC) inverter design supports an even loss distribution between semiconductor devices, compared with traditional three-level neutral-point-clamped topologies. The company has used the ANPC topology for its hybrid SiC and IGBT power module EasyPack 2B in the 1,200V family. It is claimed to optimise ‘sweet spot’ losses of Infineon’s CoolSiC MOSFET and TrenchStop IGBT4 chipsets respectively, with increased power density and a switching frequency of up to 48kHz. The inverters are suitable for the needs of new generation 1,500V photovoltaic and energy storage applications, adds Infineon.

The ANPC topology supports a system efficiency of more than 99 per cent. Implementing the hybrid Easy 2B power module in, for example, the DC/AC stage of a 1,500V solar string inverter allows for coils to be smaller than with devices with a lower switching frequency. This reduces the weight “significantly” compared with a corresponding inverter with purely silicon components, says the company. Additionally, the losses with silicon carbide are smaller than with silicon. For this reason, less heat must be dissipated so that the heat sink can also shrink. This results in smaller inverter housings and costs savings at system level. The design also reduces inverter design complexity, compared to five-level topologies.

The Easy 2B standard package for power modules is characterised by an industry-leading low stray inductance. The integrated body diode of the CoolSiC MOSFET chip ensures low-loss without the need for another SiC diode chip. There is also an NTC temperature sensor for monitoring and PressFit technology to reduce assembly time for mounting the device.

The hybrid EasyPack 2B can be ordered now.

http://www.infineon.com

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Research indicates Pohoiki Beach chip for neural-inspired algortithms

An eight million neuron system, comprised of 64 Phokiki Beach chips, the codename for Loihi chips, is now available to the research community. The neuromorphic system will allow researchers to experiment with Lohi, Intel’s brain-inspired research chip, which applies the principles found in biological brains to computer architectures. Loihi enables users to process information up to 1,000 times faster and 10,000 times more efficiently than CPUs for specialised applications like sparse coding, graph search and constraint-satisfaction problems.

The early results success has led Intel to make Pohoiki Beach available to over 60 ecosystem partners, who will use the system to solve complex, compute-intensive problems, explained Rich Uhlig, managing director of Intel Labs.

Availability means researchers can now efficiently scale up neural-inspired algorithms — such as sparse coding, simultaneous localisation and mapping (SLAM), and path planning — that can learn and adapt based on data inputs.

Intel Labs hopes to scale the architecture to 100 million neurons later this year.

As new complex computing workloads become the norm, there is a growing need for specialised architectures designed for specific applications. This will be achieved by continued process node scaling in the same vein as the power-performance increases achieved by Moore’s Law.

Using the Pohoiki Beach neuromorphic system rather than general purpose computing technologies, Intel hopes to realise gains in speed and efficiency in autonomous vehicles, smart homes and cybersecurity.

“With the Loihi chip we’ve been able to demonstrate 109 times lower power consumption running a real-time deep learning benchmark, compared to a [graphics processor unit] GPU, and five times lower power consumption compared to specialised IoT inference hardware,” said Chris Eliasmith, co-CEO of Applied Brain Research and professor at University of Waterloo. He continued: “As we scale the network up by 50 times, Loihi maintains real-time performance results and uses only 30 per cent more power, whereas the IoT hardware uses 500 per cent more power and is no longer real-time.”

In another research project, Loihi has been used in a neural network that imitates the brain’s underlying neural representations and behaviour. “The SLAM solution emerged as a property of the network’s structure,” explained Konstantinos Michmizos of Rutgers University. “We benchmarked the Loihi-run network and found it to be equally accurate while consuming 100 times less energy than a widely used CPU-run SLAM method for mobile robots,” he said.

Later this year, Intel will introduce an even larger Loihi system, named Pohoiki Springs. Intel’s engineers expect that measurements from these research systems will quantify the gains that are achievable with neuromorphic-computing methods and will clarify the application areas most suitable for the technology. This research paves the way for the eventual commercialisation of neuromorphic technology.

The Intel’s Nahuku boards pictured each contain eight to 32 Intel Loihi neuromorphic chips, interfaced to an Intel Arria 10 FPGA development kit.

(Credit: Tim Herman/Intel Corporation)

http://www.intel.com

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