Microchip presents serial memory controller for AI and ML

Microchip has entered the memory infrastructure market, offering what it claims to be the first commercially serial memory controller for artificial intelligence (AI) and machine learning (ML).

The SMC 1000 8x25G enables four times the memory channels of parallel-attached DDR4 DRAM and low latency, says Microchip. It has been introduced as the computational demands of AI and ML workloads accelerate, highlighting the shortfall in DRAM, which require an increased number of memory channels to deliver more memory bandwidth.

The SMC 1000 8x25G enables CPUs and other compute-centric SoCs to use four times the memory channels of parallel attached DDR4 DRAM within the same package footprint. This enables serial memory controllers to deliver higher memory bandwidth and media independence to these compute-intensive platforms with low latency.

As the number of processing cores within CPUs has risen, the average memory bandwidth available to each processing core has decreased because CPU and SoC devices cannot scale the number of parallel DDR interfaces on a single chip to meet the needs of the increasing core count. The SMC 1000 8x25G interfaces to the CPU via 8-bit Open Memory Interface (OMI)-compliant 25Gbits per second lanes and bridges to memory via a 72-bit DDR4 3200 interface. This formation reduces the required number of host CPU or SoC pins per DDR4 memory channel “significantly”, says Microchip, allowing for more memory channels and increased memory bandwidth.

The SMC 1000 8x25G is the first memory infrastructure product in Microchip’s portfolio that enables the media-independent OMI.

Data centre application workloads require OMI-based differential dual-inline memory modules (DDIMMs) to deliver the same high-performance bandwidth and low latency results of today’s parallel-DDR based memory products. The low latency of the SMC 1000 8x25G delivers less than four nanoseconds incremental latency to the first DRAM data access and identical subsequent data access performance, reports Microchip. OMI-based DDIMM products have virtually identical bandwidth and latency performance to comparable LRDIMM products, concludes the company.

A CPU or SoC with OMI support can use various types of media, allowing designers to select appropriate cost, power and performance metrics without having to integrate a unique memory controller for each type. Microchip points out that CPU and SoC memory interfaces today are typically locked to specific DDR interface protocols, such as DDR4, at specific interface rates.

SMART Modular, Micron and Samsung Electronics are building multiple pin-efficient 84-pin DDR4 DDIMMs with capacities ranging from 16 to 256Gbyte. These DDIMMs will leverage the SMC 1000 8x25G and will seamlessly plug into any OMI-compliant 25Gbits per second interface, Microchip advises.

The SMC 1000 is supplied with ChipLink diagnostic tools that provide extensive debug, diagnostics, configuration and analysts tools with an intuitive graphics user interface (GUI).

The SMC 1000 8x25G is sampling now.

http://www.microchip.com

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32-bit microcontrollers pack functions into less space

Reducing PCB footprint by up to 59 per cent, the RX651 32-bit microcontrollers provide functionality for space constrained IoT connectivity modules and edge devices.

Renesas Electronics announced the four new RX651 microcontrollers, supplied in small LQFP and BGA packages, that have been added to the RX651 family. The 64-pin BGA package measures 4.5 x 4.5mm, which reduces footprint size by 59 per cent compared to the 100-pin LGA and a 64-pin LQFP, measuring 10 x 10mm reduces the footprint by 49 per cent compared with the 100-pin LQFP. The microcontrollers are designed for a secure endpoint devices employing compact sensor and communication modules in industrial, network control, building automation, and smart metering systems operating at the IoT edge.

The IoT and Industry 4.0 both rely on higher performance, smaller form factor connectivity modules that support confidentiality, data integrity and availability in connected devices. According to Daryl Khoo, vice president of marketing, IoT Platform business division, Renesas Electronics said: “The 64-pin RX651 MCUs give customers the small footprint, high performance, and security features they need to safeguard their connected industrial and manufacturing systems against cyber-attacks.”

The RX651 MCUs integrate connectivity, Trusted Secure IP (TSIP), and trusted flash area protection that enable flash firmware updates in the field through secure network communications. The increase in endpoint devices operating at the edge has increased the need for secure over-the-air (OTA) firmware updates. These RX651 devices support this reprogramming requirement with integrated TSIP and enhanced flash protection. Enhanced security features are based on the RXv2 core and 40nm process that provide a 520 CoreMark score at 120MHz, and strong power efficiency with a 35 CoreMark/mA score as measured by EEMBC Benchmarks.

The integrated dual bank flash memory enables engineers to realise high root-of-trust levels through a combination of TSIP that protects the encryption key. Encryption hardware accelerators including AES, 3DES, RSA, SHA, and TRNG and code flash area protection to safeguard boot code from reprogramming. The dual bank flash function supports both background operation) and SWaP, making it easier for manufacturers to execute in-the-field firmware updates securely and reliably.

The RX651 microcontrollers monitor the operating state of machinery from both inside and outside the factory, enabling data exchanges to change production instructions, and reprogram microcontroller memory to update equipment settings.

The microcontrollers are available now from Renesas Electronics’ distributors. Target boards and starter kits, combined with the e2 studio integrated development environment (IDE) are also available.

http://www.renesas.com

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Automotive-grade MOSFETs lead way for small ADAS cameras

The new RV4xxx series enables greater miniaturisation in automotive devices such as ADAS camera modules, says Rohm Semiconductor.

The compact 1.6 x 1.6mm MOSFETs are AEC-Q101-qualified. The MOSFETs are claimed to be the first in the industry to ensure the electrode height on the side of the package (130 micron) required for vehicle applications by using original wettable flank formation technology. The result is a consistent solder quality, says Rohm – even for bottom electrode type products – enabling automatic inspection machines to easily verify solder conditions after mounting. Automotive optical inspection is performed during the assembly process, but the height of bottom electrode components solder cannot be verified after mounting. The RV4xxx series uses a proprietary wettable flank technology that guarantees an electrode height on the side of the package of 130 micron. This is achieved by making a cut into the lead frame on the side of the package before plating. However, burrs resulting from cutting into the lead frame can occur more frequently as the height of the cut increases. Rohm’s method introduces a barrier layer on the entire surface of the lead frame to minimise the occurrence of burrs. This not only prevents component rise and solder defects during mounting, but is the first on the market to ensure a 130 micron electrode height on the side of DFN1616 (1.6 x 1.6mm) packages.

Schottky barrier diodes (SBDs) are commonly used in the reverse connection protection circuits of ADAS camera modules, but the larger currents required by high resolution cameras in advanced vehicle systems, call for the use of compact MOSFETs instead that provide low on resistance and less heat generation.

For example, at a current and power consumption of 2.0A and 0.6W, respectively, conventional automotive MOSFETs can reduce mounting area by 30 per cent compared with SBDs, says Rohm. In addition, adopting bottom electrode MOSFETs for their heat dissipation characteristics, while still supporting large currents in an even smaller form factor makes it possible to decrease mounting area by as much as 78 per cent compared with conventional SBDs and by as much as 68 per cent compared with conventional MOSFETs.

Samples are available now, with OEM qualities expected in September 2019.

http://www.rohm.com/eu

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Trio of photocouplers drive industrial applications with lower power budgets

Three 15Mbits per second photocouplers from Renesas Electronics are designed to withstand the harsh operating environments of industrial and factory automation equipment. They have been developed in response to the trend for higher voltage, compact systems for safety standards and eco-friendly designs that require smaller ICs with lower power consumption. The RV1S9x60A family is claimed to have best-in-class low threshold input current (IFHL) ratings. The RV1S9160A (SO5) operates at 2.0mA, the RV1S9060A (LSO5) operates at 2.2mA and the RV1S9960A (LSDIP8) operates at 3.8mA.

Lower power consumption allows the RV1S9x60A photocouplers to suppress power supply heat generation. Operation at high temperatures, up to 125 degrees C (+110 degrees C for RV1S9960A) saves board space by allowing the photocoupler to be mounted near an IGBT or MOSFET power device. The devices are targeted at DC to AC power inverters, AC servo motors, programmable logic controllers (PLCs), robotic arms, solar and wind input power conditioners, and battery management systems for energy storage and charging.

The RV1S9x60A photocouplers feature high common mode rejection (noise tolerance) up to 50 kV/ micro seconds (minimum) to protect microcontrollers and other I/O logic circuits from high voltage spikes while transferring high-speed signals. The RV1S9x60A family also offers a variety of packages with the smallest footprint for each reinforced isolation (up to 690Vrms), and minimum creepage distances of 4.2 to 14.5mm to ensure safe operation.

The RV1S9160A, RV1S9060A and RV1S9960A photocouplers operate at low voltages, from 2.7 to 5.5V. Isolation voltages are 3,750Vrms (RV1S9160A), 5,000Vrms (RV1S9060A), and 7,500Vrms (RV1S9960A).

High temperature operation from -40°C to +125°C (RV1S9160A and RV1S9060A), and from -40°C to +110°C (RV1S9960A)

The supply current is 2.0mA (max), with a low pulse width distortion at 20 nanoseconds (max). Propagation delay is 60 nanoseconds max and propagation delay skew is 25 nanoseconds max.

The RV1S9x60A 15Mbits per second photocouplers are available now from Renesas Electronics’ worldwide distributors.

Renesas Electronics specialises in microcontrollers, analogue, power and SoC products for a range of automotive, industrial, home electronics, office automation, and information communication technology applications.

http://www.renesas.com

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