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Novosense announces quad-channel digital isolators for industrial and automotive applications

Thu, Jan 18, 2024

Novosense Microelectronics has expanded its family of digital isolators with quad-channel devices that provide the performance and protection demanded by the latest industrial and automotive applications. The new NSI824xWx high-reliability digital isolators provide compact and efficient protection and level shifting in applications ranging from solar inverters and energy storage to industrial automation and electric vehicles.

UL1577-qualified for safety, the ultra-wide body NSI824xWx industrial and automotive grade isolators combine robust EMC performance with high levels of protection against system-level electrostatic discharge (ESD), electrical fast transients (EFTs) and voltage surges. Each device offers an insulation voltage up to 8kVrms, chip-level ESD HBM protection to ±8kV and common-mode transient immunity (CMTI) up to 200kV/μs.

The isolators are available with options for four forward channels, three forward and one reverse channel or two forward and two reverse channels. Default output state on power loss can be set to low or high. Channel speeds up to 150Mbps are supported, while a wide input voltage range of 2.5V to 5.5V simplifies level shift operations by ensuring compatibility with a wide variety of digital interfaces. A low power consumption of 1.5mA per channel (at speeds of 1Mbps) helps designers to meet system efficiency targets.

As with all members of the range, the latest NSI824x devices employ an adapted capacitive isolator technology in which the digital signal undergoes modulation by an RF carrier generated on the transmitter side and is then demodulated on the receiver side. Subsequently, the signal is transmitted via a capacitive isolator and demodulated on the receiver side. Use of Novosense’s proprietary Adaptive OOK modulation technology is key to robust performance, which includes high noise resistance and low EMI.

The devices are supplied in an SOWW16 package, can support 15mm creepage distance and operate across a wide temperature range of -55℃ to 125℃, and are fully compliant with all relevant UL, CQC, CSA and VDE safety standards. In industrial automation systems, they can be used for industrial control, industrial motor drive applications, industrial transportation, instrumentation, industrial field instruments, isolated SPI, RS232, and RS485 applications, universal multi-channel isolators, and motor control. Automotive targets will include automobile sensors, electric drives and power supplies and battery management systems.
https://www.novosns.com/en

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HaiLa showcases first Wi-Fi-based extreme-low-power backscatter chip

Mon, Jan 15, 2024

HaiLa Technologies has announced the availability of the BSC2000 RF evaluation chip development and demonstration kits. Presto Engineering successfully collaborated with HaiLa to develop the first complete analog and digital implementation of HaiLa’s passive backscatter technology adapted to Wi-Fi RF bands.

Supporting an SPI interface, the chip brings seamless connectivity to a wide range of IoT devices, such as multi-channel temperature and humidity sensors. The joint partnership to develop the BSC2000 demonstrates the path to extreme-low power in IoT devices used in building, home and industrial automation; consumer electronics and wearables; smart transportation; agriculture; medical; and automotive markets.

“HaiLa is pleased to have collaborated with Presto Engineering on the silicon implementation of the BSC2000, and we’re excited to showcase our technology at CES 2024,” said Derek Kuhn, President and CEO, HaiLa Technologies, Inc. “This is another step forward in our mission to enable sustainable scaling of IoT over existing wireless infrastructures, helping end-users meet their net-zero goals through a massive reduction in battery waste. Presto’s long experience in ultra-low power RFID and NFC allowed HaiLa to complement its team with expert resources embedded into the development process, delivering the completed BSC2000 ASIC as one team.”

According to Cedric Mayor, CEO, Presto Engineering, “We are proud to support HaiLa on a key industry initiative to help reduce carbon footprint of connected objects. This project has shown that pushing the limit of IoT power efficiency is not only possible but a game changer for mitigating the cost and waste of battery usage.” Mayor adds, “With our deep expertise in RF mixed-signal chip design and ultra-low power architectures, we look forward to extending our partnership with HaiLa to jointly address new business opportunities leveraging their unique IP in future projects.”

HaiLa’s passive backscatter foundational technology is protocol-agnostic. As the most common wireless local area network (WLAN) technology in residential, enterprise and industrial environments globally, HaiLa has focused its first adaptation on Wi-Fi as a key infrastructure enabler for IoT deployments.

https://www.haila.io

https://www.presto-eng.com

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GaN FETs Enable 75 – 231 ampere laser diode control in nanoseconds for advanced automotive autonomy

Mon, Jan 15, 2024

EPC introduces three evaluation boards – EPC9179, EPC9181, and EPC9180 – featuring pulse current laser drivers of 75 A, 125 A, and 231 A , showcasing EPC’s AEC-Q101 GaN FETs. These FETs; EPC2252, EPC2204A, and EPC2218A are 30% smaller and more cost-effective than their predecessors. Designed for both long and short-range automotive lidar systems, these boards expedite solution evaluation with varied input and output options.

All boards share identical functionality, differing only in peak current and pulse width. Utilising a resonant discharge power stage, they employ a ground-referenced GaN FET driven by LMG1020 gate driver. The GaN FET’s ultrafast switching enables rapid discharge of a charged capacitor through the load’s stray inductance, enabling peak discharge currents of tens to hundreds of amps within nanoseconds. The printed circuit board is designed to minimise power loops and common source inductance while offering mounting flexibility for laser diodes or alternative loads. To enhance user-friendliness, all boards ship with EPC9989 interposer PCBs, featuring various footprints to accommodate a variety of laser diodes or other loads. Customers can choose one that meets their needs to evaluate the GaN solutions.

The EPC9179/81/80 boards are designed to be triggered from 3.3V logic or differential logic signals such as LVDS. For single-ended inputs, the boards can operate with input voltages down to 2.5 V or 1.8 V with a simple modification. Designing an automotive lidar system is complex, and finding a reliable solution is challenging. The purpose of these evaluation boards is to simplify the evaluation of powerful GaN-based lidar drivers that switch faster and deliver higher pulse current than other semiconductor solutions. For technical details, EPC offers full schematics, bill of materials (BOM), PCB layout files, and a quick start guide on EPC’s website.

“To meet the growing demand for automotive lidar, these cost-effective boards, featuring our latest AEC products, streamline evaluation, reducing time-to-market with exceptional switching performance,” said Alex Lidow, CEO, and co-founder of EPC.

https://epc-co.com

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NXP extends industry first 28 nm RFCMOS radar One-Chip Family

Thu, Jan 11, 2024

NXP has announced an extension of its automotive radar one-chip family. The new SAF86xx monolithically integrates a high-performance radar transceiver, a multi-core radar processor and a MACsec hardware engine for state-of-the-art secure data communication over Automotive Ethernet. Combined with NXP’s S32 high-performance processors, vehicle network connectivity and power management, the full system solution paves the way for advanced, software-defined radar.

The highly integrated radar SoC (System-on-Chip) is intended for streaming rich low-level radar sensor data at up to 1 Gbit/s. It helps carmakers optimize next-generation ADAS partitioning for software-defined vehicles, while providing for a smooth transition to new architectures. Additionally, OEMs will be able to easily introduce new software-defined radar features during the lifetime of the vehicle through Over-the-Air (OTA) updates.

It also shares a common architecture with the SAF85xx introduced last year and leverages 28 nm RFCMOS performance for significantly improved radar sensor capabilities, compared to prior-generation 40 nm or 45 nm products. It enables Tier-1 suppliers to build more compact and power-efficient radar sensors. Drivers and other road users will benefit from extended detection range beyond 300 m, along with more reliable detection of small objects like curb stones as well as vulnerable road users including cyclists and pedestrians.

The new radar one-chip supports NCAP safety functions including emergency braking and blind-spot detection. It also supports advanced ADAS and autonomous driving applications, including advanced comfort features for SAE levels 2+ and 3 such as traffic jam assist, highway pilot and park assist, front and rear cross-traffic alerts, as well as lateral and rear collision avoidance.

“Using our new SAF86xx radar one-chip family, OEMs can quickly and easily migrate their current radar platforms to new software-defined vehicle architectures,” said Steffen Spannagel, SVP and GM, ADAS, NXP Semiconductors. “A network of connected radar sensors with software-defined functions on a dedicated S32R radar processor in a distributed architecture can enhance radar-based perception to support advancements in autonomous driving. That includes 360-degree sensing, more powerful AI-based algorithms and secure OTA software updates.”

The comprehensive SAF8xxx family featuring the new SAF86xx and SAF85xx can be tailored for individual OEM use cases. It supports a range of sensor outputs, including object, point cloud-, or range-FFT-level data for smart sensors in today’s architectures and streaming sensors in future distributed architectures.

https://www.nxp.com/saf86xx

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Novosense announces quad-channel digital isolators for industrial and automotive applications

HaiLa showcases first Wi-Fi-based extreme-low-power backscatter chip

GaN FETs Enable 75 – 231 ampere laser diode control in nanoseconds for advanced automotive autonomy

NXP extends industry first 28 nm RFCMOS radar One-Chip Family

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