Rohm launches diode combining low VF and IR for advanced image sensor protection
Rohm has developed an innovative Schottky barrier diode that overcomes the traditional VF/IR trade-off. This way, it delivers high reliability protection for a wide range of high-resolution image sensor applications, including ADAS cameras.
Modern ADAS cameras and similar systems require higher pixel counts to meet the demand for greater precision. This has created a growing concern – the risk of damage caused by photovoltaic voltage generated under light exposure during power OFF. While low-VF SBDs are effective countermeasures, low IR is also essential during operation to prevent thermal runaway. However, simultaneously achieving both low VF and IR has been a longstanding technical challenge. Rohm has developing an SBD that combines low VF with low IR which is ideal for protection applications.
By adopting a proprietary architecture, Rohm has achieved low IR that is typically difficult to realize with low VF designs. As a result the device meets market requirements by delivering VF of less than 300mV (at IF=7.5mA even at Ta=-40°C), and an IR of less than 20mA (at VR=3V even at Ta=125°C). These characteristics not only prevent circuit damage caused by high photovoltaic voltage generated when powered OFF, but also reduce the risk of thermal runaway and malfunction during operation.
The diode is housed in a compact flat-lead SOD-323HE package (2.5mm × 1.4mm) that offers both space efficiency and mountability. This enables support for space-constrained applications such as automotive cameras, industrial equipment, and security systems. The RBE01VYM6AFH is also AEC-Q101 qualified, ensuring suitability as a protection device for next-generation automotive electronics requiring high reliability and long-term stability.
