Richardson RFPD introduces NXP’s RF power GaN on SiC transistor
High gain and ruggedness for a range of CW, pulse and wideband RF applications characterise the AFG24S100HRS RF power GaN transistor from NXP. The transistor is now available from distributor Richardson RFPD.
Richardson RFPD offers full design support capabilities for the GaN on SiC depletion-mode HEMT from NXP Semiconductors.
The AFG24S100HR5 is a 125W CW RF power GaN transistor that operates from 1.0 to 2700MHz and includes input-matching for extended bandwidth performance. With its high gain and high ruggedness, the AFG24S100HR5 is suitable for a range of CW, pulse and wideband RF applications, including public mobile radios, industrial, scientific and medical (ISM), wideband laboratory amplifiers, and wireless cellular infrastructure.
Key features of the AFG24S100HR5 include an operating voltage of 50V DC and a thermal resistance: 0.86 degree C/W.
The AFG24S100HR5 is rugged, with more than 20:1 voltage standing wave ratio (VSWR). It is offered in a NI-360H-2SB ceramic, flanged, package.
The AFG24S100HR5 is part of the line-up of NXP RF power transistors for ISM and broadcast applications that are available from Richardson RFPD. These devices are designed to simplify the use of solid-state RF in high-powered ISM applications at frequencies from 1.0 to 600MHz, as well as applications in the 915, 1300 and 2450MHz frequency bands for FM radio and VHF and UHF TV broadcast.
Richardson RFPD, an Arrow Electronics company, specialises in RF and wireless communications, power conversion and renewable energy markets. It brings relationships with many of the industry’s top radio frequency and power component suppliers and offer design centres, worldwide, to help customers design components or engineer complete solutions. Richardson RFPD’s technical sales team provides comprehensive support for customers’ go-to-market strategy, from prototype to production.
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