Mouser explores the challenges of powering AI in new eBook from Renesas
Mouser has announced a new Interactive eBook in collaboration with Renesas Electronics that explores how data centres are evolving to meet the power demands of artificial intelligence (AI).
The requirements of Generative Artificial Intelligence (GenAI) are pushing data centre power consumption ever higher. The cost of running a data centre was already heavily driven by its electricity bill, so this surge in consumption has only led to an increased importance in energy efficiency for data centre power management. In Powering AI: High-Density Power Distribution in Modern Data Centres, AI industry-leading experts discuss topics such as the shift to higher-voltage power delivery and how digital power technologies enhance energy efficiency. Videos demonstrate how liquid cooling enables higher server density and how utilising more efficient gallium nitride (GaN) and metal-oxide semiconductor field-effect transistors (MOSFETs) in power circuits allows engineers to design smaller, lighter power systems. The eBook also includes an interactive infographic detailing how power flows through a typical data centre. Renesas has a long history in the field of power management and offers customers a broad portfolio of products and solutions, many of which are highlighted in the eBook. Among the Renesas products available from Mouser are:
The Renesas REXFET-1 power MOSFETs feature ultra-compact, leadless designs for enhanced thermal performance, management, and reliability. The REXFET-1 wafer manufacturing process enables the devices to reduce on-resistance by up to 30 percent and an up to 10-percent reduction in Qg characteristics for higher efficiency.
The ISL99390FRZ smart power stage (SPS) module offers best-in-class current sense accuracy over line, load, and temperature. When combined with a Renesas digital PWM controller, these devices enable precision system-level power management and best-in-class transient response for loadline-based regulators. These devices simplify design by eliminating typical DC resistance (DCR) sensing networks and associated thermal compensation components.
The ISL68239 12-phase PWM controller uses the proprietary Renesas digital synthetic current modulation scheme to achieve the industry-best combination of transient response, ease of tuning, and efficiency across the full load range. Developers can use the intuitive Renesas PowerNavigator™ software to easily configure and monitor the device.
The TP65H015G5WS SuperGaN FET combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The device uses advanced epitaxy (epi) and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
