Weartech-ICs & Semiconductors Archives - Page 2 of 43

Infineon expands XENSIV MEMS microphone lineup

Tue, Sep 16, 2025

Infineon has expanded its XENSIV MEMS microphone lineup with the introduction of the IM72D128V and IM69D129F, two innovative digital PDM microphones designed for exceptional audio performance, energy efficiency, and robustness. Leveraging Infineon’s proprietary Sealed Dual Membrane (SDM) technology, both microphones achieve a high level of robustness against water and dust (IP57), making them suitable for use in demanding environments.

The IM72D128V is distinguished by its top-tier Signal-to-Noise Ratio (SNR) of 71.5 dB(A), making it particularly suited for applications requiring precise low-noise audio pick-up. It operates at ultra-low power consumption, with 430 µA in high-performance mode and 160 µA in low-power mode, which makes it ideal for energy-efficient, battery-powered devices such as high-end headphones. With a footprint of 4 x 3 x 1.2 mm³, it is still small enough to fit most space constraint consumer devices.

The IM69D129F is tailored for compact design, with a footprint of 3.5 x 2.65 x 0.98 mm³, which makes it ideal for space-constrained devices. It achieves reliable audio performance with an SNR of 69 dB(A) and features low power consumption, operating at 450 µA in high-performance mode and 170 µA in low-power mode, contributing to extended battery life in portable devices ensuring extended battery life. Its small size makes it particularly suited for multi-microphone designs in compact systems. The devices can be used in Active Noise Cancellation (ANC) headphones and earbuds, as well as high-quality audio capturing in laptops, tablets, conference systems, and cameras.

The IM72D128V and IM69D129F also support Voice User Interface (VUI) applications in smart speakers, automotive infotainment, IoT devices, and home and industrial automation. Furthermore, both microphones can be used in industrial or home monitoring applications that require audio pattern detection, such as industrial monitoring and home security systems.

In addition, the IM72D128V and IM69D129F are equipped with a low-noise preamplifier and a sigma-delta ADC, providing digital PDM output for seamless integration into modern audio systems. Their shared features include an 11 Hz flat frequency response for precise sound reproduction and a ±1 dB sensitivity tolerance, making them ideal for multi-microphone arrays. Whether used for far-field audio pick-up or portable devices, these microphones enable high-quality audio capturing in challenging environments while enhancing energy efficiency and reliability. Both microphones comply with IEC (60747, 60749) and JEDEC (47/20/22) standards, ensuring reliability and robustness for consumer and industrial applications.

www.infineon.com/mems

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Alif Semi release benchmark results from its latest GenAI enabled MCUs

Wed, Aug 13, 2025

Alif Semiconductor has released benchmarks on its latest E4, E6 and E8 microcontrollers and fusion processors.

The new Ensemble devices contain support for up to two MIPI-CSI image sensors. They also include a fully hardware-accelerated image signal processor (ISP) pipeline that operates at up to 60fps at 2MP resolution. This image throughput is enabled with a new wide memory subsystem for extremely fast on-chip as well as off-chip transactions, pushing inferencing speed well below a millisecond when running AI models from internal, highly power efficient MRAM.

The generative AI capability in the Ensemble E4, E6, and E8 devices is made possible by Alif’s future-proof system architecture. Alif is the first silicon provider to offer the Arm Ethos-U85 NPU which supports transformer-based ML networks. As an example of power efficiency, an SLM executed on an E4 device draws only 36mW of power when generating text to construct a story based on a user-provided prompt.

These levels of performance and efficiency enable developers to innovate next-generation products in human-to-computer interfacing, healthcare and diagnostics, robotics, transportation, toys and education, smart homes, and smart city equipment.

Paul Williamson, Senior Vice President and General Manager, IoT Line of Business at Arm, said: “Generative AI is raising the bar for intelligence beyond the cloud, demanding greater performance, privacy, responsiveness, and efficiency. Powered by Arm Ethos technology and supported by our robust software ecosystem, Alif’s latest Ensemble MCUs bring advanced on-device AI capabilities to even the most constrained devices, unlocking real-time insights in applications like health monitoring and wearables. This enables developers to deliver the next generation of intelligent, on-device experiences.”

https://alifsemi.com

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ROHM develops an ultra-compact MOSFET ideal for fast charging

Tue, Jul 08, 2025

ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.

With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less.

In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimised for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimising the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).

The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimises power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.

For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.

The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturisation with the development of an even smaller 1.2mm × 1.2mm model.

https://www.rohm.com

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ST combines activity tracking and high-impact sensing in miniature AI-enabled sensor

Tue, May 13, 2025

ST has revealed an inertial measurement unit that combines sensors tuned for activity tracking and high-g impact measurement in a single, space-saving package. Devices equipped with this module can allow applications to fully reconstruct any event with high accuracy and so provide more features and superior user experiences. Now that it’s here, markets can expect powerful new capabilities to emerge in mobiles, wearables, and consumer medical products, as well as equipment for smart homes, smart industry, and smart driving.

The new LSM6DSV320X sensor is an industry first in a regular-sized module (3mm x 2.5mm) with embedded AI processing and continuous registration of movements and impacts. Leveraging ST’s sustained investment in micro-electromechanical systems (MEMS) design, the innovative dual-accelerometer device ensures high accuracy for activity tracking up to 16g and impact detection up to 320g.

The LSM6DSV320X extends the family of sensors that contain ST’s machine-learning core (MLC), the embedded AI processor that handles inference directly in the sensor to lower system power consumption and enhance application performance. It features two accelerometers, designed for coexistence and optimal performance using advanced techniques unique to ST. One of these accelerometers is optimised for best resolution in activity tracking, with maximum range of ±16g, while the other can measure up to ±320g to quantify severe shocks such as collisions or high-impact events.

By covering an extremely wide sensing range with uncompromised accuracy throughout, all in one tiny device, ST’s new AI MEMS sensor will let consumer and IoT devices provide even more features while retaining a stylish or wearable form factor. An activity tracker can provide performance monitoring within normal ranges, as well as measuring high impacts for safety in contact sports, adding value for consumers and professional/semi-pro athletes. Other consumer-market opportunities include gaming controllers, enhancing the user’s experience by detecting rapid movements and impacts, as well as smart tags for attaching to items and recording movement, vibrations, and shocks to ensure their safety, security, and integrity.

With its wide acceleration measurement range, ST’s sensor will also enable new generations of smart devices for sectors such as consumer healthcare and industrial safety. Potential applications include personal protection devices for workers in hazardous environments, assessing the severity of falls or impacts. Other uses include equipment for accurately assessing the health of structures such as buildings and bridges.

The sensor’s high integration simplifies product design and manufacture, enabling advanced monitors to enter their target markets. Designers can create slim, lightweight form factors that are easy to wear or attach to equipment.

https://www.st.com

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Infineon expands XENSIV MEMS microphone lineup

Alif Semi release benchmark results from its latest GenAI enabled MCUs

ROHM develops an ultra-compact MOSFET ideal for fast charging

ST combines activity tracking and high-impact sensing in miniature AI-enabled sensor

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