Robust package technology, MRigidCSP, by Alpha and Omega Semiconductor (AOS), is initially offered on its AOCR33105E, 12V, common drain, dual N-channel MOSFET. The packaging technology is designed to decrease on resistance while increasing mechanical strength, and is particularly suited to battery applications in smartphones, tablets and ultra-thin notebooks.
AOS explained that fast charging, which requires lower power loss in the battery management circuit, is now widely adopted for portable devices. As the charging currents increase, ultra-low electrical resistance is needed for improved performance. In standard wafer-level chip scale packages (WL-CSPs), the substrate can be a significant portion of the total resistance when back-to-back MOSFETs are employed in battery management applications. A thinner substrate reduces the overall resistance but drastically reduces the package’s mechanical strength. This reduction of mechanical strength can lead to more stress during the PCB assembly reflow process, potentially causing warping or cracking in the die and, ultimately, failure in the application. The AOCR33105E is designed with trench-power MOSFET technology in a common drain configuration for design simplicity. It features low on resistance with ESD protection to improve performance and safety in battery management, such as protection switches and mobile battery charging and discharging circuits.
“Incorporating the AOS MRigidCSP packaging technology with our new dual N-channel MOSFET combines electrical performance improvements with the benefit of high robustness,” said Peter H. Wilson, senior MOSFET product line marketing director at AOS.
AOS designed the MRigidCSP package technology to be used with high aspect ratio CSP die sizes. The CSP construction delivers “a significantly strengthened battery MOSFET that won’t warp or break during the board manufacturing process,” added Wilson.
The AOCR33105E is available in a 2.08 x 1.45mm package, with RDS(on) of 3mOhm at 4.5V / 4.2mOhm at 3.1V.
The AOCR33105E in the MRigidCSP package is immediately available in production quantities with a lead time of 14 to 16 weeks. It is RoHS 2.0 compliant and is halogen-free.
Weartech-ICs & Semiconductors
Compact LTE-M / NB-IoT module by u-blox has 2G fallback capability
The LEXI-R4 is a compact module that has been customised for applications where space is limited. It has dimensions of 16 x 16mm and supports all LTE-M and NB-IoT bands with an RF output power of 23dBm. It also has the possibility to operate on a 2G network. Typical applications are small asset trackers, such as pet and personal trackers, micromobility devices and luggage tags. It is also able to encompass larger applications, such as alarm systems, vending machines and stolen vehicle recovery systems, advised u-blox.
The u-blox LEXI-R4’s compact dimensions are a 40 per cent footprint reduction compared to the company’s u-blox SARA-R4. The space gained can be used to host larger antennas, which can improve radio frequency (RF) performance, or to accommodate larger-size batteries.
It also has 2G fallback capability. Whenever LTE-M / NB-IoT coverage conditions are not optimal, it will keep functioning by falling back onto a 2G network. This is practical and convenient in countries where LTE-M / NB-IoT networks have yet to be fully deployed.
The module is natively designed to support GNSS (Global Navigation Satellite System) AT commands and is also ready for GNSS bundling. Its dedicated port enables easy integration with any u-blox M10-based GNSS module, for instance the u-blox MIA-M10, to improve performance and lower power consumption, said u-blox. The module can also connect to additional positioning services such as AssistNow and CellLocate.
“Since the module supports the u-blox M10 GNSS platform, customers save execution time and resources,” says Samuele Falcomer, senior product line manager, product centre cellular at u-blox.
The module’s AT commands and a dedicated I2C port can operate the GNSS core to eliminate the need to integrate additional code into the MCU. “In addition, the LEXI-R4 module offers a single SKU with global LPWA (low power wide area) coverage that simplifies logistics,” added Falcomer.
The first samples will be available by the end of Q3 2023.
u-blox provides positioning and wireless communication in automotive, industrial, and consumer markets. Its services and products let people, vehicles and machines determine their precise position and communicate wirelessly over cellular and short range networks. The company offers a broad portfolio of chips, modules, and secure data services and connectivity, to empower developers to introduce solutions for the IoT, quickly and cost-effectively. The company has headquarters in Thalwil, Switzerland and offices in Europe, Asia, and the USA.
Four LPDDR4X SDRAMs halve power consumption
Four SDRAMs by Alliance Memory combine low voltage operation with fast clock speeds. The fourth generation LPDDR4 SDRAMs range from 2Gbit to 16Gbit.
The latest additions to the company’s high speed CMOS mobile low power LPDDR4X SDRAMs are the 2Gbit AS4C128M16MD4V-062BAN, the 4Gbit AS4C256M16MD4V-062BAN, the 8Gbit AS4C512M16MD4V-053BIN and the 16Gbit AS4C512M32MD4V-053BIN. According to Alliance Memory, they deliver approximately 50 per cent lower power ratings in the 200-ball FBGA package for higher power efficiency.
They have low voltage operation of 0.6V, lower than 1.1V for LPDDR4 SDRAMs, to increase battery life in portable electronics for the consumer, commercial, and industrial markets, including smartphones, smart speakers, security surveillance systems, and other IoT devices utilising AI and 5G technologies. They also provide increased efficiency for advanced audio and high resolution video in embedded applications. The LPDDR4X SDRAMs deliver clock speeds up to 1.86GHz for high transfer rates of 3.7Gbits per second.
For automotive applications – including ADAS – the AEC-Q100-qualified AS4C128M16MD4V-062BAN and AS4C256M16MD4V-062BAN offer a temperature range of -40 to +105 degrees C and on-chip ECC for increased reliability. The AS4C512M16MD4V-053BIN and AS4C512M32MD4V-053BIN operate over an industrial temperature range of -40 to +85 degrees C.
The AS4C512M16MD4V-053BIN, AS4C128M16MD4V-062BAN and AS4C256M16MD4V-062BAN are organised as single channel devices each consisting of eight banks of 16 bits; the AS4C512M32MD4V-053BIN offers two channels. All four components provide fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and selectable output drive strength. An on-chip temperature sensor controls the self-refresh rate.
Alliance Memory’s LPDDR4X SDRAMs are designed as drop-in, pin-for-pin-compatible replacements for use in high bandwidth, high performance memory system applications, eliminating the need for costly redesigns and part requalification.
Samples and production quantities of the new LPDDR4X SDRAMs are available now, with lead times of 12 weeks.
Alliance Memory provides critical and hard-to-find memory ICs for the communications, computing, consumer electronics, medical, automotive, and industrial markets. The company’s product range includes flash, DRAM, and SRAM memory ICs with commercial, industrial, and automotive operating temperature ranges and densities from 64Kbit to 16Gbyte.
Privately held, Alliance Memory maintains headquarters in Kirkland, Washington, USA and regional offices in Europe, Asia, Canada, and South America.
Super-Short Channel technology protects mobile devices’ batteries
Super-Short Channel is Magnachip’s latest design technology to reduce MOSFET resistance by shortening the channel length between the source and the drain. It is used in its seventh generation MXT LV MOSFET range extending its portfolio for battery protection circuits of mobile devices.
The Ron of these new MOSFETs has been reduced by 24 to 40 per cent, compared to previous generations, improving battery performance with low power losses when a battery is charging or discharging.
In addition, Magnachip provides customised design service, based on the application specifications and battery capacities. As a result, the company said, the sizes of the MOSFETs can be reduced by five to 20 per cent respectively.
Magnachip said it provides technical capabilities, flexible design and compact size options, for the extended MXT LV MOSFET line-up to satisfy the various technical requirements of a range of mobile devices, from premium foldable phones to wireless earphones.
The company has released five new MXT LV MOSFETs for battery protection circuits in 2023.
The 12 V MDWC12D028ERH, MDWC12D044E and 22V MDWC22D020E MOSFETs are available in a WLCSP. The 24V MDW24D048E and MDW24D150E are supplied in wafer form.
Magnachip Semiconductor designs and manufactures analogue and mixed signal semiconductor platform solutions for communications, IoT, consumer, computing, industrial and automotive applications. The company owns a portfolio of approximately 1,100 registered patents and pending applications.
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