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Experience the most complete In-Cabin Monitoring Solution at CES

Mon, Dec 04, 2023

Melexis and emotion3D are launching a revolutionary automotive in-cabin monitoring solution based on 3D time-of-flight technology (ToF). It overcomes limitations of established driver monitoring systems (DMS).

Legislative momentum for advanced driver distraction warning (ADDW) is growing worldwide. Driver Monitoring Systems (DMS) strive to detect driver inattentiveness, fatigue, and distraction. Occupant Monitoring Systems (OMS) aim to provide occupant detection, classification and body tracking to enhance passive safety through smart restraint control (RCS) & dynamic automatic suppression systems (DASS). 3D ToF technology uniquely offers the best performance to merge both DMS & OMS applications into a single camera solution.

3D ToF cameras utilising Melexis’ automotive-qualified MLX75027, true VGA ToF sensor, and emotion3D’s CABIN EYE software simultaneously generate IR and distance images, thereby mapping a full scene in three dimensions. This essential information is used to accurately assess driver fitness to drive, whilst indicating the location of other occupants in the vehicle, detect limb position, track movements and body or hand gestures. Direct access to measured distance data greatly improves image segmentation options, reduces the computational load and thus lowers system cost.

“The combination of Melexis’ automotive track record in 3D sensing with easily accessible application software from emotion3D helps customers to overcome the challenges to create improved safety systems ”, says Kristof Lieben, Product Manager at Melexis. “Overall, this joint offering significantly simplifies and accelerates the development of camera monitoring systems. It enables competitively priced solutions that will enhance safety for everyone on the road and can increase comfort & convenience for its users.”

“This Driver & Occupant Monitoring System (DOMS) solution in partnership with Melexis showcases the latest technology in the field to combine three important concerns in the in-cabin environment: active safety, passive safety and user experience” said Florian Seitner, CEO of emotion3D. “We hope to welcome many visitors from the automotive industry to come see the demonstrator in action at CES this January.”

https://www.melexis.com

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Rohm’s new high power 120w laser diode for LiDAR

Fri, Dec 01, 2023

Rohm has developed a high-power laser diode – the RLD90QZW8. It is ideal for industrial equipment and consumer applications requiring distance measurement and spatial recognition.

In recent years, LiDAR is being increasingly adopted in a wide range of applications that require automation – including AGVs (Automated Guided Vehicles), robot vacuums, and autonomous vehicles – where it is necessary to accurately measure distance and recognise space. In this context, there is a need to improve the performance and output of laser diodes when used as light sources to increase detection distance and accuracy.

To meet this demand, Rohm established original patented technology to achieve a narrower emission width that contributes to longer range and higher accuracy in LiDAR applications. In 2019, Rohm released the 25W laser diode RLD90QZW5 followed by the 75W laser diode RLD90QZW3 in 2021. In response to the growing market demand for even higher output, Rohm developed the new 120W laser diode.

The RLD90QZW8 is a 120W infrared high output laser diode developed for LiDAR used in distance measurement and spatial recognition in 3D ToF systems. Original device development technology allows Rohm to reduce the temperature dependence of the laser wavelength by 66% over general products, to just Δ11.6nm (Ave. 0.10nm/°C). This makes it possible to narrow the bandpass filter while extending the detection range of LiDAR. At the same time, a uniform light intensity of 97% is achieved over the industry’s smallest class* of emission width of 270µm, representing a range of 264µm that contributes to higher resolution. Additional features that include high power-to-light conversion efficiency (PCE) enables efficient optical output that contributes to lower power consumption in LiDAR applications.

A variety of design support materials necessary for integrating and evaluating the new product is available free of charge on Rohm’s website that facilitate market introduction. In order to drive laser diodes with high nano-second order speed required for LiDAR applications, ROHM developed a reference design available now that combines ROHM’s 150V EcoGaN™ HEMT and gate drivers.

Rohm has also acquired certification under the IATF 16949 automotive quality management standard for both front-end and back-end processes at its manufacturing facilities. As a result, product development of laser diodes for automotive applications (AEC-Q102 compliant) is underway, with commercialisation planned by the end of 2024.

https://www.rohm.com

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Renesas unveils the first generation of 32-bit RISC-V CPU core

Fri, Dec 01, 2023

Renesas has announced that it has designed and tested a 32-bit CPU core based on the open-standard RISC-V instruction set architecture (ISA). Renesas is among the first in the industry to independently develop a CPU core for the 32-bit general-purpose RISC-V market, providing an open and flexible platform for IoT, consumer electronics, healthcare and industrial systems. The new RISC-V CPU core will complement Renesas’ existing IP portfolio of 32-bit microcontrollers (MCUs), including the proprietary RX Family and the RA Family based on the Arm Cortex-M architecture.

RISC-V is an open ISA which is quickly gaining popularity in the semiconductor industry, due to its flexibility, scalability, power efficiency and open ecosystem. While many MCU providers have recently created joint investment alliances to accelerate their development of RISC-V products, Renesas has already developed a new RISC-V core on its own. This versatile CPU can serve as a main application controller, a complementary secondary core in SoCs, on-chip subsystems, or even in deeply embedded ASSPs. This positions Renesas as a leader in the emerging RISC-V market, following previous introductions of its 32-bit voice-control and motor-control ASSP devices, as well as the RZ/Five 64-bit general purpose microprocessors (MPUs), which were built on CPU cores developed by Andes Technology Corp.

“Renesas takes pride in offering embedded processing solutions for the broadest range of customers and applications,” said Daryl Khoo, Vice President of the IoT Platform Division at Renesas. “This new core extends our leadership in the RISC-V market and uniquely positions us to deliver more solutions that accommodate a diverse range of requirements.”

“We congratulate Renesas on achieving its recent milestone in 32-bit RISC-V MCU architecture development,” said Calista Redmond, CEO at RISC-V International. “This achievement exemplifies how RISC-V ecosystem partners, such as Renesas, are rapidly advancing RISC-V innovation. Our RISC-V community now spans 70 countries with more than 4,000 members, and we eagerly anticipate further innovations emerging from this dynamic, expanding market.”

The Renesas RISC-V CPU achieves an impressive 3.27 CoreMark/MHz performance, outperforming similar architectures on the market. It includes extensions to improve performance, while reducing code size.
Renesas is sampling devices based on the new core to select customers, with plans to launch its first RISC-V-based MCU and associated development tools in Q1 2024. Details of the new MCU will be published at that time. More information about RISC-V solutions is available at: renesas.com/risc-v.

https://www.renesas.com/

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Nexperia’s first SiC MOSFETs raise the bar for safe, robust and reliable power switching

Fri, Dec 01, 2023

Nexperia have announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. NSF040120L3A0 and NSF080120L3A0 are the first in a series of planned releases which will see Nexperia’s SiC MOSFET portfolio quickly expand to include devices with a variety of RDS(on) values in a choice of through-hole and surface mounted packages.

“With these inaugural products, Nexperia and Mitsubishi Electric wanted to bring true innovation to a market that has been crying out for more wide-bandgap device suppliers”, according to Katrin Feurle, Senior Director & Head of Product Group SiC at Nexperia. “Nexperia can now offer SiC MOSFET devices which offer best-in-class performance across several parameters, including high RDS(on) temperature stability, low body diode voltage drop, tight threshold voltage specification as well as a very well-balanced gate charge ratio making the device safe against parasitic turn on. This is the opening chapter in our commitment to producing the highest quality SiC MOSFETs in our partnership with Mitsubishi Electric. Together we will undoubtedly push the boundaries of SiC device performance over the coming years.”

“Together with Nexperia, we’re thrilled to introduce these new SiC MOSFETs as the first product of our partnership”, says Toru Iwagami, Senior General Manger, Power Device Works, Semiconductor & Device Group in Mitsubishi Electric. “Mitsubishi Electric has accumulated superior expertise of SiC power semiconductors, and our devices deliver a unique balance of characteristics.”

RDS(on) is a critical performance parameter for SiC MOSFETs as it impacts conduction power losses. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and used its innovative process technology to ensure its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25°C to 175°C. Unlike other many currently available SiC devices in the market.

Nexperia’s SiC MOSFETs also exhibit the very low total gate charge (QG), which brings the advantage of lower gate drive losses. Furthermore, Nexperia balanced gate charge to have an exceptionally low ratio of QGD to QGS, a characteristic which increases device immunity against parasitic turn-on.

Together with the positive temperature coefficient of SiC MOSFETs, Nexperia’s SiC MOSFETs offers also ultra-low spread in device-to device threshold voltage, VGS(th), which allows very well-balanced current-carrying performance under static and dynamic conditions when devices are operated in parallel. Furthermore, low body diode forward voltage (VSD) is a parameter which increases device robustness and efficiency, while also relaxing the dead-time requirement for asynchronous rectification and free wheel operation.

Nexperia is also planning the future release of automotive grade MOSFETs. The NSF040120L3A0 and NSF080120L3A0 are available in production quantities now. Please contact Nexperia sales representatives for samples of the full SiC MOSFET offering.

To learn more about Nexperia’s MOSFETs, visit: https://www.nexperia.com/sic-mosfets

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Experience the most complete In-Cabin Monitoring Solution at CES

Rohm’s new high power 120w laser diode for LiDAR

Renesas unveils the first generation of 32-bit RISC-V CPU core

Nexperia’s first SiC MOSFETs raise the bar for safe, robust and reliable power switching

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