Harwin launches floating connectors to support high-speed automated manufacture and reliability

Harwin has launched a range of board-to-board connectors that address the data and power transfer demands of high-performance applications while accommodating small movements in multiple axes to support high-speed automated assembly and enhance resistance to shock and vibration during operational life.

Offering up to 160 contacts in a symmetrical double row layout, the new Flecto floating connector family is available with three choices of miniature pitches: 0.5mm (.0197”), 0.635mm (.025”) and 0.8mm (0.0315”). By accommodating movement of up to ±0.5 mm in both the X and Y axes, Flecto allows for accurate placement of multiple connectors between the same two PCBs where the sum of misalignments might, otherwise, present challenges for high-speed, high-precision mating.

The positional tolerance flexibility of Flecto connectors also enhances system reliability by maintaining connection integrity during shock and vibration events and reducing the possibility of degradation or failure from ‘fretting’ – a situation that occurs when long-term vibration causes plating to wear from rigid mating pins, exposing the underlying alloy to potential oxidation.

Flecto connectors support board-to-board mating heights as low as 7.2mm and data rates as high as 12Gbit/s. Additional power pins available with the 0.5mm pitch options are rated for currents up to 3A. Vertical and horizontal female connectors allow boards to be connected in parallel or at right angles to each other, while Flecto signal-only connectors feature either location pegs or posts to eliminate movement during solder reflow. On the mixed signal and power connectors, through-board solderable posts are provided for location accuracy and enhanced mechanical strength. A number of the connectors feature shrouded contacts to prevent accidental damage when no mating connector is present, while others offer polarisation within the shroud to ensure uni-directional mating.

Target applications for the new range include factory automation, electric vehicles, LED displays, security cameras, IoT devices, data communications and a wide variety of embedded systems.

https://www.harwin.com/flecto

Written by Annie Shinn

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Nexperia unveils next gen low-voltage analog switches

Nexperia, has introduced a new series of 4- and 8-channel analog switches designed to monitor and protect 1.8 V electronic systems. This series of multiplexers includes AEC-Q100 qualified variants intended for use in automotive applications as well as standard versions suitable for a broader range of consumer and industrial applications including sensor monitoring and diagnostics, enterprise computing and domestic appliances.

When using analogue switches, designers commonly require additional voltage translators because the control circuitry cannot operate from the voltage level used to supply power to the switch. By contrast, the control pins in the NMUX1308 and NMUX1309 switches operate independently of their power supply voltage range, negating the need to use additional components to perform level-shifting and thus saving board-space and reducing costs.

Nexperia has designed this series of switches to include additional features which enhance overall system safety. Fail-safe logic permits control pins to be biased prior to system power-up and remain biased even after the system has powered down. This eliminates the requirement for power sequencing between the analog switch and the system microcontroller unit (MCU). A power-off protection feature allows analog pins to be biased prior to system power-up and to remain biased after system power-down. This removes the restrictions associated with power sequencing for the analog switch and various power rails which support analog signals and ADC circuitry further down the signal-chain. The combination of both features in the NMUX130X prevents back-power of the supply rail through any pin of the analog switch.

These devices integrate injection current control circuitry, limiting output voltage shifts on the active channel to under 5 mV when an overvoltage event happens on disabled signal channels. This eliminates the need for external diode and resistor networks, saving board-space and reducing cost.

The NMUX1308 and NMUX1309 switches include 8-channel and dual 4-channel devices, in standard (-40 °C to +85 °C) and automotive-qualified (-40 °C to +125 °C) versions and are available in leaded and leadless options, including a leadless package which support AOI (Automated Optical Inspection) for automotive applications.

https://www.nexperia.com/analogswitches

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Nexperia broadens its range of discrete FET solutions at APEC 2024

Nexperia bringing its product innovations to APEC and has announced the release of several new MOSFETs to further broaden its range of discrete switching solutions for use in various applications across multiple end markets. This release includes 100 V application specific MOSFETs (ASFETs) for PoE, eFuse and relay replacement in 60% smaller DFN2020 packaging, and 40 V NextPowerS3 MOSFETs with improved electromagnetic compatibility (EMC) performance.

PoE switches typically have up to 48 ports, each requiring 2 MOSFETs for protection. With up to 96 MOSFETs on a single PCB, any reduction in device footprint is attractive. For this reason, Nexperia has released 100 V PoE ASFETs in 2 mm x 2 mm DFN2020 packaging which occupies 60% less space than previous versions in LFPAK33 packaging. A critical function of these devices is to protect PoE ports by limiting inrush currents while safely managing fault conditions. To manage this scenario, Nexperia has enhanced the safe operating area (SOA) of these devices by up to 3x with only a minimal increase in RDS(on). These ASFETs are also suitable for battery management, Wi-Fi hotspot, 5G picocell and CCTV applications and can serve as replacements for mechanical relays in smart thermostats, for example.

EMC-related issues caused by MOSFET switching usually only emerge late in the product development life cycle and resolving them can incur additional R&D costs and delay market release. Typical solutions include using significantly more expensive MOSFETs with lower RDS(on) (to slow down switching and absorb excessive voltage ringing) or to fit an external capacitive snubber circuit but this approach has the disadvantage of increasing component count. Nexperia has optimised its 40 V NextPowerS3 MOSFETs to offer similar EMC performance as that which can be achieved using an external snubber circuit, while also offering higher efficiency. These MOSFETs are suitable for use in switching converters and motor controllers across various applications and are available in LFPAK56 packaging.

To learn more about Nexperia’s PoE ASFETs visit: https://nexperia.com/asfets-for-poe
To learn more about Nexperia’s NextPowerS3 MOSFETs visit: https://nexperia.com/nextpowers3

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Infineon and VMAX intensify collaboration for energy-efficient and cost-effective fast charging of electric vehicles

VMAX, a leading Chinese manufacturer of power electronics and motor drives for new energy vehicles, has selected the new CoolSiC hybrid discrete with TRENCHSTOP 5 Fast-Switching IGBT and CoolSiC Schottky Diode from Infineon for its next generation 6.6 kW OBC/DCDC on-board chargers. Infineon’s components come in a D²PAK package and combine ultra-fast TRENCHSTOP 5 IGBTs with half-rated free-wheeling SiC Schottky barrier diodes to achieve a perfect cost-performance ratio for both hard and soft switching topologies.

“We are proud to choose Infineon’s CoolSiC Hybrid device in our next-generation OBC, achieving higher reliability, stability, improved performance, and power density. This deepens our already strong partnership with Infineon and drives technological application innovation through close collaboration, working together to promote the thriving development of new energy vehicles,” said Jinzhu Xu, PL Director& Chief Engineer, R&D Department at VMAX.

“We are excited to strengthen our partnership with VMAX with our highly efficient hybrid products,” said Robert Hermann, Vice President for Automotive High Voltage Chips and Discrete’s at Infineon. “Together, we will continue to drive e-mobility advancements, providing efficient solutions that meet the requirements of the industry in terms of performance, quality and system cost.”

With its fast, hard switching TRENCHSTOP 5 650 V IGBT co-packed with zero reverse recovery CoolSiC Schottky diode, the hybrid discrete benefits from very low switching losses at switching speeds above 50 kHz. This makes the device an excellent option for high-power electric vehicle charging systems. In addition, the robust 5 th generation CoolSiC Schottky diode offers increased robustness against surge currents, maximising reliability. Furthermore, the diffusion soldering of the SiC diode has improved the thermal resistance (R th) to the package for small chip sizes, resulting in increased power switching capability. With these features, it enables optimum system reliability and longevity, meeting the stringent requirements of the automotive industry. To further maximise compatibility with existing designs, the product also features a pin-to-pin compatible design based on the widely used D²PAK package.

https://www.infineon.com

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