Nexperia’s first SiC MOSFETs raise the bar for safe, robust and reliable power switching

Nexperia have announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. NSF040120L3A0 and NSF080120L3A0 are the first in a series of planned releases which will see Nexperia’s SiC MOSFET portfolio quickly expand to include devices with a variety of RDS(on) values in a choice of through-hole and surface mounted packages.

“With these inaugural products, Nexperia and Mitsubishi Electric wanted to bring true innovation to a market that has been crying out for more wide-bandgap device suppliers”, according to Katrin Feurle, Senior Director & Head of Product Group SiC at Nexperia. “Nexperia can now offer SiC MOSFET devices which offer best-in-class performance across several parameters, including high RDS(on) temperature stability, low body diode voltage drop, tight threshold voltage specification as well as a very well-balanced gate charge ratio making the device safe against parasitic turn on. This is the opening chapter in our commitment to producing the highest quality SiC MOSFETs in our partnership with Mitsubishi Electric. Together we will undoubtedly push the boundaries of SiC device performance over the coming years.”

“Together with Nexperia, we’re thrilled to introduce these new SiC MOSFETs as the first product of our partnership”, says Toru Iwagami, Senior General Manger, Power Device Works, Semiconductor & Device Group in Mitsubishi Electric. “Mitsubishi Electric has accumulated superior expertise of SiC power semiconductors, and our devices deliver a unique balance of characteristics.”

RDS(on) is a critical performance parameter for SiC MOSFETs as it impacts conduction power losses. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and used its innovative process technology to ensure its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25°C to 175°C. Unlike other many currently available SiC devices in the market.

Nexperia’s SiC MOSFETs also exhibit the very low total gate charge (QG), which brings the advantage of lower gate drive losses. Furthermore, Nexperia balanced gate charge to have an exceptionally low ratio of QGD to QGS, a characteristic which increases device immunity against parasitic turn-on.

Together with the positive temperature coefficient of SiC MOSFETs, Nexperia’s SiC MOSFETs offers also ultra-low spread in device-to device threshold voltage, VGS(th), which allows very well-balanced current-carrying performance under static and dynamic conditions when devices are operated in parallel. Furthermore, low body diode forward voltage (VSD) is a parameter which increases device robustness and efficiency, while also relaxing the dead-time requirement for asynchronous rectification and free wheel operation.

Nexperia is also planning the future release of automotive grade MOSFETs. The NSF040120L3A0 and NSF080120L3A0 are available in production quantities now. Please contact Nexperia sales representatives for samples of the full SiC MOSFET offering.

To learn more about Nexperia’s MOSFETs, visit: https://www.nexperia.com/sic-mosfets

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NXP introduces battery cell controller IC designed for lifetime performance and battery pack safety

NXP has introduced its next-generation battery cell controller IC, designed to optimise battery management systems (BMS) performance and safety. With down to 0.8 mV cell measurement accuracy and maximum cell balancing capability over a wide temperature range, NXP’s MC33774 18-channel analog front-end device comes with ASIL D support for use in safety-critical, high-voltage lithium-ion (Li-ion) batteries to maximise the usable capacity.

Li-ion batteries are commonly used in EVs because of their high energy density by volume and weight, low self-discharge, low maintenance, and ability to sustain thousands of charge-discharge cycles. They account for approximately 30 to 40 percent of the total cost of the EV. A typical 800 V Li-ion battery system comprises around 200 individual cells connected in series. It is critical to accurately estimate the battery pack’s state-of-charge (SoC) at any given temperature and instant in the years-long life-cycle. NXP’s MC33774 is designed to deliver lifetime accurate cell measurement data in temperatures ranging from -40°C to +125°C, enabling very precise range predictions.

“The MC33774 has undergone a rigorous design and validation process to ensure its safety and reliability in automotive use,” said Robert Li, Vice President and General Manager, Product Line Driver and Energy Systems at NXP. “This includes system-level validation to test electromagnetic compatibility, electrostatic discharge, transient immunity, and communication reliability in demanding scenarios. The MC33774 is designed to reduce costs for OEM systems while maintaining its reliability, allowing for a safe launch of cars despite shorter development cycles in the EV industry.”

Based on NXP’s SmartMOS SOI (Silicon-on-Isolator) technology, the MC33774 Li-ion battery cell controller offers cell measurement accuracy down to ±0.8 mV, which helps to ensure lifetime performance with both nickel manganese cobalt (NCM) and lithium iron phosphate (LFP) cell chemistries. The precision design and calibration technologies of the NXP MC33774 save customers end-of-line (EoL) calibration costs.

The NXP MC33774 18-channel Li-ion battery controller IC is part of the NXP High Voltage BMS chip-set solution, which includes future products like the MC33777, a battery junction box controller for pack level measurement, and the already released MC33665 battery management communication gateway. The comprehensive and robust BMS system solution offers first-time-right battery systems while working to avoid field incidental surprises. The complete design package, which includes production-grade software and functional safety libraries, helps to accelerate the development time of functional safety systems and saves system bill-of-material costs.

https://www.nxp.com

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Rohde & Schwarz 170 GHz power sensors ease use and traceability in the D-band

The new R&S NRP170TWG(N) sensors from Rohde & Schwarz are used in general R&D for 6G mobile communications, novel sub-THz communications, sensing and future automotive radar applications. Accuracy is vital to such complex wideband measurements and the sensors are fully calibrated for long-term stability and can compensate for environmental temperature influences within the specified operating range from 0°C to + 50°C. R&S NRP170TWG(N) sensors have a dynamic range of –35 dBm to +20 dBm and up to 500 measurements per second, making them extremely fast with outstanding performance and the only NMI-traceable RF power sensors for the D-band.
Ease of use
All Rohde & Schwarz power sensors are easy to use and stable with excellent connectivity, letting researchers, developers and production engineers focus on more challenging tasks. R&S NRP170TWG(N) sensors provide stable power readouts even at levels below -20 dBm, have no drift and are resilient to external temperature changes and out-of-band signals (such as far infrared (FIR). Fast measurement speeds and easy digital access to data output are very important in mass production facilities. The R&S NRP170TWG(N) can be connected via USB or LAN and operated with standard SCPI protocols. The new sensors perfectly complement other D-band test solutions from Rohde & Schwarz.
NMI traceability

When developing the R&S NRP170TWG(N) sensors, Rohde & Schwarz collaborated with Germany’s national metrology institute: the Physikalisch-Technische-Bundesanstalt (PTB) and other NMIs as part of a European Union project to establish traceability up to 170 GHz. Previously, NMI traceability was only possible up to 110 GHz. NMI traceability is a prerequisite for commercial and industrial utilisation of a frequency band. Defined power levels need to be maintained throughout a frequency range. RF power is traced to a DC power reference and compared by different national metrology institutes.

Daniel Blaschke, head of development for RF & Microwave Power Meters at Rohde & Schwarz, says: “Through partnering with the PTB and other NMIs we helped extend traceability into the D-band, preparing commercialisation and mass adoption of products operating in this frequency range. Rohde & Schwarz is extremely proud to be the first to transform this technological accomplishment into a commercially viable, traceable RF power sensor up to 170 GHz.

Dr. Karsten Kuhlmann, head of the working group High-Frequency Basic Quantities at PTB, says: “Having accurate and calibrated power levels across the setup in the sub-THz region is no trivial task. Power levels at the DUT measurement plane need to be measured accurately, reliably and traceably to national standards. We are happy to advance the commercialization and mass production of future D-band products with our industry collaboration.”

The new R&S NRP170TWG(N) thermal power sensors are now available from Rohde & Schwarz.

For more information, visit: https://www.rohde-schwarz.com/_63493-197529.html

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Alchip unveils “first automotive ASIC design platform” for a global industry

At the Design Solutions Forum 2023 in Kawasaki, Japan, Alchip Technologies rolled out what is claimed to be the semiconductor industry’s first automotive ASIC platform. It targets the specialised needs of the global automotive industry and streamlines the ASIC design needs of global automotive IC module and component manufacturers, as well as automotive companies, said Alchip.

The platform consists of six modules: Design for Autonomous Driving (AD)/ Advanced Driver Assistance System (ADAS), Design for Safety, Design for Test, Design for Reliability, Automotive Chip Sign-off, and Automotive Chip Manufacturing (MFG) Service.
Design for AD/ADAS integrates a CPU and neural processing unit (NPU) into the smallest possible die size, while meeting aggressive higher performance and lower power consumption required by automotive applications, said Alchip.

The Design for Safety module follows the ISO26262 pre-scribed flow that includes required isolated TMR / lock-step design methodology. This module also features an experienced safety manager and includes the mandated Development Interface Agreement (DIA) that defines the relationship between the manufacturer and the supplier throughout the entire automotive safety lifecycle and activities.

Design for Reliability includes enhanced electromigration (EM) as part of silicon lifecycle management.  It also covers AEC-Q grade IP sourcing and implementation.

The Automotive Chip Manufacturing Service works with IATF16949 -approved manufacturing suppliers. Services include tri-temp testing by target AEC-Q grade, automotive wafer, automotive substrate, assembly and burn-in.

Design for Test capabilities support in system test (IST) and MBIST / LBIST design, critical and redundancy logic for yield harvest, automotive-level ATPG coverage, and physical-aware ATPG.

The final sign-off module covers an ageing library based on a customer mission profile, OD / UD / AVS / DVFS library support, and the final design for manufacturing sign-off.

The platform will “speed up the development and time-to-market of essential safety-critical ADAS applications, while significantly advancing the innovation with increasing complex autonomous driving implementation and features,” Alchip CEO, Johnny Shen.

Access to the new automotive platform is available now through Alchip offices in Taipei, Silicon Valley, Yokohama, Shanghai, Penang, and its affiliate office in Israel.

Alchip Technologies was founded in 2003 and is headquartered in Taipei, Taiwan. The company provides silicon and design and production services for system companies developing complex and high volume ASICs and SoCs.  Alchip offers advanced 2.5D / 3DIC design, CoWoS / chiplet design and manufacturing management.

Customers include global leaders in AI, HPC/supercomputer, mobile phones, entertainment device, networking equipment and other electronic product categories.

http://www.alchip.com

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