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Rohm’s new high power 120w laser diode for LiDAR

Fri, Dec 01, 2023

Rohm has developed a high-power laser diode – the RLD90QZW8. It is ideal for industrial equipment and consumer applications requiring distance measurement and spatial recognition.

In recent years, LiDAR is being increasingly adopted in a wide range of applications that require automation – including AGVs (Automated Guided Vehicles), robot vacuums, and autonomous vehicles – where it is necessary to accurately measure distance and recognise space. In this context, there is a need to improve the performance and output of laser diodes when used as light sources to increase detection distance and accuracy.

To meet this demand, Rohm established original patented technology to achieve a narrower emission width that contributes to longer range and higher accuracy in LiDAR applications. In 2019, Rohm released the 25W laser diode RLD90QZW5 followed by the 75W laser diode RLD90QZW3 in 2021. In response to the growing market demand for even higher output, Rohm developed the new 120W laser diode.

The RLD90QZW8 is a 120W infrared high output laser diode developed for LiDAR used in distance measurement and spatial recognition in 3D ToF systems. Original device development technology allows Rohm to reduce the temperature dependence of the laser wavelength by 66% over general products, to just Δ11.6nm (Ave. 0.10nm/°C). This makes it possible to narrow the bandpass filter while extending the detection range of LiDAR. At the same time, a uniform light intensity of 97% is achieved over the industry’s smallest class* of emission width of 270µm, representing a range of 264µm that contributes to higher resolution. Additional features that include high power-to-light conversion efficiency (PCE) enables efficient optical output that contributes to lower power consumption in LiDAR applications.

A variety of design support materials necessary for integrating and evaluating the new product is available free of charge on Rohm’s website that facilitate market introduction. In order to drive laser diodes with high nano-second order speed required for LiDAR applications, ROHM developed a reference design available now that combines ROHM’s 150V EcoGaN™ HEMT and gate drivers.

Rohm has also acquired certification under the IATF 16949 automotive quality management standard for both front-end and back-end processes at its manufacturing facilities. As a result, product development of laser diodes for automotive applications (AEC-Q102 compliant) is underway, with commercialisation planned by the end of 2024.

https://www.rohm.com

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Nexperia’s first SiC MOSFETs raise the bar for safe, robust and reliable power switching

Fri, Dec 01, 2023

Nexperia have announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. NSF040120L3A0 and NSF080120L3A0 are the first in a series of planned releases which will see Nexperia’s SiC MOSFET portfolio quickly expand to include devices with a variety of RDS(on) values in a choice of through-hole and surface mounted packages.

“With these inaugural products, Nexperia and Mitsubishi Electric wanted to bring true innovation to a market that has been crying out for more wide-bandgap device suppliers”, according to Katrin Feurle, Senior Director & Head of Product Group SiC at Nexperia. “Nexperia can now offer SiC MOSFET devices which offer best-in-class performance across several parameters, including high RDS(on) temperature stability, low body diode voltage drop, tight threshold voltage specification as well as a very well-balanced gate charge ratio making the device safe against parasitic turn on. This is the opening chapter in our commitment to producing the highest quality SiC MOSFETs in our partnership with Mitsubishi Electric. Together we will undoubtedly push the boundaries of SiC device performance over the coming years.”

“Together with Nexperia, we’re thrilled to introduce these new SiC MOSFETs as the first product of our partnership”, says Toru Iwagami, Senior General Manger, Power Device Works, Semiconductor & Device Group in Mitsubishi Electric. “Mitsubishi Electric has accumulated superior expertise of SiC power semiconductors, and our devices deliver a unique balance of characteristics.”

RDS(on) is a critical performance parameter for SiC MOSFETs as it impacts conduction power losses. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and used its innovative process technology to ensure its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25°C to 175°C. Unlike other many currently available SiC devices in the market.

Nexperia’s SiC MOSFETs also exhibit the very low total gate charge (QG), which brings the advantage of lower gate drive losses. Furthermore, Nexperia balanced gate charge to have an exceptionally low ratio of QGD to QGS, a characteristic which increases device immunity against parasitic turn-on.

Together with the positive temperature coefficient of SiC MOSFETs, Nexperia’s SiC MOSFETs offers also ultra-low spread in device-to device threshold voltage, VGS(th), which allows very well-balanced current-carrying performance under static and dynamic conditions when devices are operated in parallel. Furthermore, low body diode forward voltage (VSD) is a parameter which increases device robustness and efficiency, while also relaxing the dead-time requirement for asynchronous rectification and free wheel operation.

Nexperia is also planning the future release of automotive grade MOSFETs. The NSF040120L3A0 and NSF080120L3A0 are available in production quantities now. Please contact Nexperia sales representatives for samples of the full SiC MOSFET offering.

To learn more about Nexperia’s MOSFETs, visit: https://www.nexperia.com/sic-mosfets

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NXP introduces battery cell controller IC designed for lifetime performance and battery pack safety

Wed, Nov 29, 2023

NXP has introduced its next-generation battery cell controller IC, designed to optimise battery management systems (BMS) performance and safety. With down to 0.8 mV cell measurement accuracy and maximum cell balancing capability over a wide temperature range, NXP’s MC33774 18-channel analog front-end device comes with ASIL D support for use in safety-critical, high-voltage lithium-ion (Li-ion) batteries to maximise the usable capacity.

Li-ion batteries are commonly used in EVs because of their high energy density by volume and weight, low self-discharge, low maintenance, and ability to sustain thousands of charge-discharge cycles. They account for approximately 30 to 40 percent of the total cost of the EV. A typical 800 V Li-ion battery system comprises around 200 individual cells connected in series. It is critical to accurately estimate the battery pack’s state-of-charge (SoC) at any given temperature and instant in the years-long life-cycle. NXP’s MC33774 is designed to deliver lifetime accurate cell measurement data in temperatures ranging from -40°C to +125°C, enabling very precise range predictions.

“The MC33774 has undergone a rigorous design and validation process to ensure its safety and reliability in automotive use,” said Robert Li, Vice President and General Manager, Product Line Driver and Energy Systems at NXP. “This includes system-level validation to test electromagnetic compatibility, electrostatic discharge, transient immunity, and communication reliability in demanding scenarios. The MC33774 is designed to reduce costs for OEM systems while maintaining its reliability, allowing for a safe launch of cars despite shorter development cycles in the EV industry.”

Based on NXP’s SmartMOS SOI (Silicon-on-Isolator) technology, the MC33774 Li-ion battery cell controller offers cell measurement accuracy down to ±0.8 mV, which helps to ensure lifetime performance with both nickel manganese cobalt (NCM) and lithium iron phosphate (LFP) cell chemistries. The precision design and calibration technologies of the NXP MC33774 save customers end-of-line (EoL) calibration costs.

The NXP MC33774 18-channel Li-ion battery controller IC is part of the NXP High Voltage BMS chip-set solution, which includes future products like the MC33777, a battery junction box controller for pack level measurement, and the already released MC33665 battery management communication gateway. The comprehensive and robust BMS system solution offers first-time-right battery systems while working to avoid field incidental surprises. The complete design package, which includes production-grade software and functional safety libraries, helps to accelerate the development time of functional safety systems and saves system bill-of-material costs.

https://www.nxp.com

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Rohde & Schwarz 170 GHz power sensors ease use and traceability in the D-band

Mon, Nov 27, 2023

The new R&S NRP170TWG(N) sensors from Rohde & Schwarz are used in general R&D for 6G mobile communications, novel sub-THz communications, sensing and future automotive radar applications. Accuracy is vital to such complex wideband measurements and the sensors are fully calibrated for long-term stability and can compensate for environmental temperature influences within the specified operating range from 0°C to + 50°C. R&S NRP170TWG(N) sensors have a dynamic range of –35 dBm to +20 dBm and up to 500 measurements per second, making them extremely fast with outstanding performance and the only NMI-traceable RF power sensors for the D-band.
Ease of use
All Rohde & Schwarz power sensors are easy to use and stable with excellent connectivity, letting researchers, developers and production engineers focus on more challenging tasks. R&S NRP170TWG(N) sensors provide stable power readouts even at levels below -20 dBm, have no drift and are resilient to external temperature changes and out-of-band signals (such as far infrared (FIR). Fast measurement speeds and easy digital access to data output are very important in mass production facilities. The R&S NRP170TWG(N) can be connected via USB or LAN and operated with standard SCPI protocols. The new sensors perfectly complement other D-band test solutions from Rohde & Schwarz.
NMI traceability

When developing the R&S NRP170TWG(N) sensors, Rohde & Schwarz collaborated with Germany’s national metrology institute: the Physikalisch-Technische-Bundesanstalt (PTB) and other NMIs as part of a European Union project to establish traceability up to 170 GHz. Previously, NMI traceability was only possible up to 110 GHz. NMI traceability is a prerequisite for commercial and industrial utilisation of a frequency band. Defined power levels need to be maintained throughout a frequency range. RF power is traced to a DC power reference and compared by different national metrology institutes.

Daniel Blaschke, head of development for RF & Microwave Power Meters at Rohde & Schwarz, says: “Through partnering with the PTB and other NMIs we helped extend traceability into the D-band, preparing commercialisation and mass adoption of products operating in this frequency range. Rohde & Schwarz is extremely proud to be the first to transform this technological accomplishment into a commercially viable, traceable RF power sensor up to 170 GHz.

Dr. Karsten Kuhlmann, head of the working group High-Frequency Basic Quantities at PTB, says: “Having accurate and calibrated power levels across the setup in the sub-THz region is no trivial task. Power levels at the DUT measurement plane need to be measured accurately, reliably and traceably to national standards. We are happy to advance the commercialization and mass production of future D-band products with our industry collaboration.”

The new R&S NRP170TWG(N) thermal power sensors are now available from Rohde & Schwarz.

For more information, visit: https://www.rohde-schwarz.com/_63493-197529.html

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Rohm’s new high power 120w laser diode for LiDAR

Nexperia’s first SiC MOSFETs raise the bar for safe, robust and reliable power switching

NXP introduces battery cell controller IC designed for lifetime performance and battery pack safety

Rohde & Schwarz 170 GHz power sensors ease use and traceability in the D-band

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