Experience the most complete In-Cabin Monitoring Solution at CES

Melexis and emotion3D are launching a revolutionary automotive in-cabin monitoring solution based on 3D time-of-flight technology (ToF). It overcomes limitations of established driver monitoring systems (DMS).

Legislative momentum for advanced driver distraction warning (ADDW) is growing worldwide. Driver Monitoring Systems (DMS) strive to detect driver inattentiveness, fatigue, and distraction. Occupant Monitoring Systems (OMS) aim to provide occupant detection, classification and body tracking to enhance passive safety through smart restraint control (RCS) & dynamic automatic suppression systems (DASS). 3D ToF technology uniquely offers the best performance to merge both DMS & OMS applications into a single camera solution.

3D ToF cameras utilising Melexis’ automotive-qualified MLX75027, true VGA ToF sensor, and emotion3D’s CABIN EYE software simultaneously generate IR and distance images, thereby mapping a full scene in three dimensions. This essential information is used to accurately assess driver fitness to drive, whilst indicating the location of other occupants in the vehicle, detect limb position, track movements and body or hand gestures. Direct access to measured distance data greatly improves image segmentation options, reduces the computational load and thus lowers system cost.

“The combination of Melexis’ automotive track record in 3D sensing with easily accessible application software from emotion3D helps customers to overcome the challenges to create improved safety systems ”, says Kristof Lieben, Product Manager at Melexis. “Overall, this joint offering significantly simplifies and accelerates the development of camera monitoring systems. It enables competitively priced solutions that will enhance safety for everyone on the road and can increase comfort & convenience for its users.”

“This Driver & Occupant Monitoring System (DOMS) solution in partnership with Melexis showcases the latest technology in the field to combine three important concerns in the in-cabin environment: active safety, passive safety and user experience” said Florian Seitner, CEO of emotion3D. “We hope to welcome many visitors from the automotive industry to come see the demonstrator in action at CES this January.”

https://www.melexis.com

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Rohm’s new high power 120w laser diode for LiDAR

Rohm has developed a high-power laser diode – the RLD90QZW8. It is ideal for industrial equipment and consumer applications requiring distance measurement and spatial recognition.

In recent years, LiDAR is being increasingly adopted in a wide range of applications that require automation – including AGVs (Automated Guided Vehicles), robot vacuums, and autonomous vehicles – where it is necessary to accurately measure distance and recognise space. In this context, there is a need to improve the performance and output of laser diodes when used as light sources to increase detection distance and accuracy.

To meet this demand, Rohm established original patented technology to achieve a narrower emission width that contributes to longer range and higher accuracy in LiDAR applications. In 2019, Rohm released the 25W laser diode RLD90QZW5 followed by the 75W laser diode RLD90QZW3 in 2021. In response to the growing market demand for even higher output, Rohm developed the new 120W laser diode.

The RLD90QZW8 is a 120W infrared high output laser diode developed for LiDAR used in distance measurement and spatial recognition in 3D ToF systems. Original device development technology allows Rohm to reduce the temperature dependence of the laser wavelength by 66% over general products, to just Δ11.6nm (Ave. 0.10nm/°C). This makes it possible to narrow the bandpass filter while extending the detection range of LiDAR. At the same time, a uniform light intensity of 97% is achieved over the industry’s smallest class* of emission width of 270µm, representing a range of 264µm that contributes to higher resolution. Additional features that include high power-to-light conversion efficiency (PCE) enables efficient optical output that contributes to lower power consumption in LiDAR applications.

A variety of design support materials necessary for integrating and evaluating the new product is available free of charge on Rohm’s website that facilitate market introduction. In order to drive laser diodes with high nano-second order speed required for LiDAR applications, ROHM developed a reference design available now that combines ROHM’s 150V EcoGaN™ HEMT and gate drivers.

Rohm has also acquired certification under the IATF 16949 automotive quality management standard for both front-end and back-end processes at its manufacturing facilities. As a result, product development of laser diodes for automotive applications (AEC-Q102 compliant) is underway, with commercialisation planned by the end of 2024.

https://www.rohm.com

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Nexperia’s first SiC MOSFETs raise the bar for safe, robust and reliable power switching

Nexperia have announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. NSF040120L3A0 and NSF080120L3A0 are the first in a series of planned releases which will see Nexperia’s SiC MOSFET portfolio quickly expand to include devices with a variety of RDS(on) values in a choice of through-hole and surface mounted packages.

“With these inaugural products, Nexperia and Mitsubishi Electric wanted to bring true innovation to a market that has been crying out for more wide-bandgap device suppliers”, according to Katrin Feurle, Senior Director & Head of Product Group SiC at Nexperia. “Nexperia can now offer SiC MOSFET devices which offer best-in-class performance across several parameters, including high RDS(on) temperature stability, low body diode voltage drop, tight threshold voltage specification as well as a very well-balanced gate charge ratio making the device safe against parasitic turn on. This is the opening chapter in our commitment to producing the highest quality SiC MOSFETs in our partnership with Mitsubishi Electric. Together we will undoubtedly push the boundaries of SiC device performance over the coming years.”

“Together with Nexperia, we’re thrilled to introduce these new SiC MOSFETs as the first product of our partnership”, says Toru Iwagami, Senior General Manger, Power Device Works, Semiconductor & Device Group in Mitsubishi Electric. “Mitsubishi Electric has accumulated superior expertise of SiC power semiconductors, and our devices deliver a unique balance of characteristics.”

RDS(on) is a critical performance parameter for SiC MOSFETs as it impacts conduction power losses. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and used its innovative process technology to ensure its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25°C to 175°C. Unlike other many currently available SiC devices in the market.

Nexperia’s SiC MOSFETs also exhibit the very low total gate charge (QG), which brings the advantage of lower gate drive losses. Furthermore, Nexperia balanced gate charge to have an exceptionally low ratio of QGD to QGS, a characteristic which increases device immunity against parasitic turn-on.

Together with the positive temperature coefficient of SiC MOSFETs, Nexperia’s SiC MOSFETs offers also ultra-low spread in device-to device threshold voltage, VGS(th), which allows very well-balanced current-carrying performance under static and dynamic conditions when devices are operated in parallel. Furthermore, low body diode forward voltage (VSD) is a parameter which increases device robustness and efficiency, while also relaxing the dead-time requirement for asynchronous rectification and free wheel operation.

Nexperia is also planning the future release of automotive grade MOSFETs. The NSF040120L3A0 and NSF080120L3A0 are available in production quantities now. Please contact Nexperia sales representatives for samples of the full SiC MOSFET offering.

To learn more about Nexperia’s MOSFETs, visit: https://www.nexperia.com/sic-mosfets

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NXP introduces battery cell controller IC designed for lifetime performance and battery pack safety

NXP has introduced its next-generation battery cell controller IC, designed to optimise battery management systems (BMS) performance and safety. With down to 0.8 mV cell measurement accuracy and maximum cell balancing capability over a wide temperature range, NXP’s MC33774 18-channel analog front-end device comes with ASIL D support for use in safety-critical, high-voltage lithium-ion (Li-ion) batteries to maximise the usable capacity.

Li-ion batteries are commonly used in EVs because of their high energy density by volume and weight, low self-discharge, low maintenance, and ability to sustain thousands of charge-discharge cycles. They account for approximately 30 to 40 percent of the total cost of the EV. A typical 800 V Li-ion battery system comprises around 200 individual cells connected in series. It is critical to accurately estimate the battery pack’s state-of-charge (SoC) at any given temperature and instant in the years-long life-cycle. NXP’s MC33774 is designed to deliver lifetime accurate cell measurement data in temperatures ranging from -40°C to +125°C, enabling very precise range predictions.

“The MC33774 has undergone a rigorous design and validation process to ensure its safety and reliability in automotive use,” said Robert Li, Vice President and General Manager, Product Line Driver and Energy Systems at NXP. “This includes system-level validation to test electromagnetic compatibility, electrostatic discharge, transient immunity, and communication reliability in demanding scenarios. The MC33774 is designed to reduce costs for OEM systems while maintaining its reliability, allowing for a safe launch of cars despite shorter development cycles in the EV industry.”

Based on NXP’s SmartMOS SOI (Silicon-on-Isolator) technology, the MC33774 Li-ion battery cell controller offers cell measurement accuracy down to ±0.8 mV, which helps to ensure lifetime performance with both nickel manganese cobalt (NCM) and lithium iron phosphate (LFP) cell chemistries. The precision design and calibration technologies of the NXP MC33774 save customers end-of-line (EoL) calibration costs.

The NXP MC33774 18-channel Li-ion battery controller IC is part of the NXP High Voltage BMS chip-set solution, which includes future products like the MC33777, a battery junction box controller for pack level measurement, and the already released MC33665 battery management communication gateway. The comprehensive and robust BMS system solution offers first-time-right battery systems while working to avoid field incidental surprises. The complete design package, which includes production-grade software and functional safety libraries, helps to accelerate the development time of functional safety systems and saves system bill-of-material costs.

https://www.nxp.com

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