NXP improves battery health monitoring with EIS capable battery management chipset

NXP Semiconductors has announced its industry-first Electrochemical Impedance Spectroscopy (EIS) battery management chipset with hardware-based nanosecond-level synchronisation of all devices. The new system solution is designed to enhance safety, longevity, and performance in electric vehicles and energy storage systems. It integrates EIS measurement directly into three battery management system (BMS) chipset units, enabling carmakers to gain deeper insights into battery health and behaviour.

OEMs today face increasing pressure to deliver safe and faster charging, longer battery life, and safer battery energy storage systems – all while keeping costs and design complexity in check. Traditional, software-based battery monitoring methods often struggle to precisely detect dynamic, millisecond level events that serve as early indicators of failure. To ensure safe and fast charging, these systems frequently require additional sensors and software.

NXP’s new chipset tackles these challenges by embedding EIS directly into the hardware, consisting of three BMS units: the BMA7418 cell sensing device, the BMA6402 gateway, and the BMA8420 battery junction box controller. It enables real-time, high-frequency monitoring without the need for extra components or costly redesigns. The hardware-based solution operates in highly precise synchronisation to deliver highly accurate impedance measurements with directly in-chip integrated discrete Fourier transformation, helping OEMs better manage safe and fast charging, detect early signs of battery failure, and reduce system complexity.

“The EIS solution brings a powerful lab-grade diagnostic tool into the vehicle. It simplifies system design by reducing the need for additional temperature sensors and supports the shift toward faster, safer and more reliable charging without compromising battery health”, said Naomi Smit, VP and GM, Drivers and Energy System at NXP. “The chipset also offers a low-barrier upgrade path, with pin-to-pin compatible packages that can be directly upgraded to on cell module and battery junction box control units.”

The technology of Electrochemical Impedance Spectroscopy is based on sending controlled electrical excitation signals through the entire battery. NXP’s system solution includes an electrical excitation signal generator, which both pre-charges the high-voltage circuit and produces the excitation signal. This setup allows the DC link capacitors to act as a secondary energy storage—alongside the battery—making the excitation process more energy efficient.

By measuring how the cells respond across different frequencies to the current excitation, the responses reveal subtle changes in the cell’s internal condition, such as temperature gradients, ageing effects, or micro short circuits. Unlike traditional time-based measurements, EIS provides a fast and reliable way to assess the impedance of each cell and distinguish from capacity fade, to estimate battery health even during dynamic conditions like charging or load shifts.

https://www.nxp.com

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POLYN Technology announces first silicon-implemented NASP chip

POLYN Technology has announced the successful manufacturing and testing of the world’s first silicon-proven implementation of its unique NASP (Neuromorphic Analog Signal Processing) technology.

The NASP platform employs trained neural networks in the analog domain to perform AI inference with much lower power consumption than conventional digital neural processors.

NASP chips with AI cores process sensor signals in their native analog form in microseconds, using microwatt-level power and eliminating all overhead associated with digital operations. This is ideal for always-on edge devices. Application-specific NASP chips can be designed for a diverse range of edge AI applications, including audio, vibration, wearable, robotics, industrial, and automotive sensing.

NASP technology and POLYN’ design tools automatically convert trained digital neural network models into ultra-low-power analog neuromorphic cores ready for manufacturing in standard CMOS processes. The testing confirmed the chip’s parameters strictly match its model.

This first chip contains a VAD core for real-time voice activity detection. It marks the first step toward a new level of voice processing offered by POLYN. It will be followed by other cores POLYN is developing for speaker recognition and voice extraction, enhancing home appliances, critical communications headsets, and other voice-controlled devices.

Customers developing products with ultra-low power voice control can apply online for the NASP VAD chip evaluation kit.

POLYN’s NASP technology and design tools give semiconductor and AI developers a new way to quickly implement neural networks directly in analog silicon. It offers process-agnostic design across 40–90 nm CMOS nodes and automatic conversion from digital ML models.

POLYN is preparing evaluation kits for early adopters and extending the implementation of its NASP product families for automotive, critical communication, and wearable applications.

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Rohm launches diode combining low VF and IR for advanced image sensor protection

Rohm has developed an innovative Schottky barrier diode that overcomes the traditional VF/IR trade-off. This way, it delivers high reliability protection for a wide range of high-resolution image sensor applications, including ADAS cameras.

Modern ADAS cameras and similar systems require higher pixel counts to meet the demand for greater precision. This has created a growing concern – the risk of damage caused by photovoltaic voltage generated under light exposure during power OFF. While low-VF SBDs are effective countermeasures, low IR is also essential during operation to prevent thermal runaway. However, simultaneously achieving both low VF and IR has been a longstanding technical challenge. Rohm has developing an SBD that combines low VF with low IR which is ideal for protection applications.

By adopting a proprietary architecture, Rohm has achieved low IR that is typically difficult to realize with low VF designs. As a result the device meets market requirements by delivering VF of less than 300mV (at IF=7.5mA even at Ta=-40°C), and an IR of less than 20mA (at VR=3V even at Ta=125°C). These characteristics not only prevent circuit damage caused by high photovoltaic voltage generated when powered OFF, but also reduce the risk of thermal runaway and malfunction during operation.

The diode is housed in a compact flat-lead SOD-323HE package (2.5mm × 1.4mm) that offers both space efficiency and mountability. This enables support for space-constrained applications such as automotive cameras, industrial equipment, and security systems. The RBE01VYM6AFH is also AEC-Q101 qualified, ensuring suitability as a protection device for next-generation automotive electronics requiring high reliability and long-term stability.

www.rohm.com

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Renesas adds new MCU groups to RA8 series with 1GHz performance and embedded MRAM

Renesas has introduced the RA8M2 and RA8D2 microcontroller (MCU) groups. Based on a 1 GHz Arm Cortex-M85 processor with an optional 250 MHz Arm Cortex-M33 processor, the new MCUs are the latest Renesas offerings to deliver an unmatched 7300 Coremarks of raw compute performance, the industry benchmark for MCUs. The optional Cortex-M33 processor enables efficient system partitioning and task segregation.

Both RA8D2 and RA8M2 devices are ultra-high performance MCUs as part of the second generation of the RA8 Series – the RA8M2 are general-purpose devices, and the RA8D2 MCUs are packed with a variety of high-end graphics peripherals. They are built on the same high-speed, low-power 22-nm ULL process used for the RA8P1 and RA8T2 devices introduced earlier this year. The devices include single and dual core options, and a specialised feature set to address the needs of a broad base of compute intensive applications. They take advantage of the high performance of the Arm Cortex-M85 processor and Arm’s Helium technology to offer a significant performance boost for digital signal processor (DSP) and machine learning (ML) implementations.

The RA8M2 and RA8D2 devices offer embedded MRAM that has several advantages over Flash technology – high endurance & data retention, faster writes, no erase needed, and byte addressable with lower leakage and manufacturing costs. SIP options with 4 or 8 MB of external flash in a single package are also available for more demanding applications. Both the RA8M2 and RA8D2 MCUs include Gigabit Ethernet interfaces and a 2-port TSN switch to address industrial networking use cases.

Both of the MCU Groups provide a combination of the performance of the Cortex-M85 core, together with large memory and a rich peripheral set, making them particularly suitable for a wide range of IoT and industrial use cases. The lower power CM33 core can act as a housekeeping MCU, executing system tasks while the high performance CM85 core stays in sleep mode, to be woken up only as needed for high compute tasks, thus lowering the system power consumption.

The new RA8M2 and RA8D2 Group MCUs are supported by Renesas’ Flexible Software Package (FSP). The FSP enables faster application development by providing all the infrastructure software needed, including multiple RTOS, BSP, peripheral drivers, middleware, connectivity, networking, and security stacks as well as reference software to build complex AI, motor control and cloud solutions. It allows customers to integrate their own legacy code and choice of RTOS (FreeRTOS and Azure RTOS) with FSP, thus providing full flexibility in application development. In addition, Zephyr support is now included. Using the FSP will ease migration of existing designs to the new RA8 Series devices.

www.renesas.com/RA8M2

www.renesas.com/RA8D2

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