Demonstrating what is believed to be the industry’s first commercial integration of an ovonic threshold switching (OTS) selector with an oxide-based ReRAM cell, Weebit Nano says it is a significant step in the implementation of 3D memory stacking and crossbar architectures in future developments.
Weebit Nano and development partner CEA-Leti, announced the commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector three months ahead of schedule.
A selector in a memory chip enables optimised cell access within a memory array. It assists in isolating memory cells so only the specific cells that should be accessed are, and all the other cells are not impacted. In the embedded space, a transistor is typically used as the selector device, but a transistor does not support the densities required for discrete chips. OTS is a preferred selector technology for discrete ReRAM chips as it enables the smallest ReRAM bit cell, as small as 4F2, together with endurance, low energy consumption, and high switching speeds.
“New markets like IoT, 5G and AI are driving needs for emerging NVM on advanced process nodes,” said Jim Handy, Memory Analyst, Objective Analysis. “Weebit’s combination of ReRAM with an OTS selector promises to scale to the advanced processes and high memory densities that new memory chips will need.”
According to Gabriel Molas, Senior Scientist at CEA-Leti, “Creation of an OTS selector is quite a complex endeavour given the concurrent requirements to achieve high endurance, reduce variability, and maintain characteristics at high temperature operation.”
Coby Hanoch, CEO of Weebit, said: “We see a broad range of opportunities for discrete ReRAM, from NOR flash to storage class memory, in a range of segments.”
Weebit Nano develops next-generation semiconductor memory technology. The company’s ground-breaking Resistive RAM (ReRAM) addresses the growing need for significantly higher performance and lower power memory solutions in a range of new electronic products such as IoT devices, smartphones, robotics, autonomous vehicles, 5G communications and artificial intelligence (AI). Weebit’s ReRAM allows semiconductor memory elements to be significantly faster, less expensive, more reliable and more energy efficient than those using existing flash memory solutions. It is based on fab-friendly materials which means the technology can be quickly and easily integrated with existing flows and processes, without the need for special equipment or large investments.
